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RWP1030050-37 Image

The RWP1030050-37 from RFHIC is a GaN Power Amplifier (PA) that operates from 1 to 3 GHz. It delivers a CW output power of 47 dBm (~50 W) with a power gain of 37 dB and a PAE (power added efficiency) of 40%. This PA is based on Gallium Nitride on Silicon carbide (GaN-on-SiC) technology and uses a unique patented technology for improved thermal handling. It requires a DC supply of 35 V and consumes less than 6.5 A of current. This amplifier is available in a package that measures 72 x 55 x 16.8 mm and has SMA (female) connectors. It is ideal for use in broadcasting, telecommunications, and medical applications.

Product Specifications

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Product Details

  • Part Number
    RWP1030050-37
  • Manufacturer
    RFHIC
  • Description
    50 W GaN Power Amplifier from 1 to 3 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    Module with Connector View all
  • Industry Application
    Broadcast, Medical
  • Frequency
    1 to 3 GHz
  • Power Gain
    35 to 37 dB
  • Gain Flatness
    ±1.0 to ±2.0 dB
  • Output Power
    31.6 to 50.11 W
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    GaN Amplifier View all
  • Input Return Loss
    7 to 10 dB
  • Supply Voltage
    31.5 to 32 V
  • Current Consumption
    5 to 6.5 mA
  • Quiscent Current
    1.2 to 1.7 mA
  • Transistor Technology
    GaN-on-SiC
  • Dimensions
    72(L) x 55(W) x 16.8(H) mm
  • Input Connector
    SMA - Female
  • Output Connector
    SMA - Female
  • Weight
    125 g
  • Cooling Options
    External Heat-Sink
  • Operating Temperature
    -40 to 80 Degree C
  • Storage Temperature
    -40 to 105 Degree C
  • RoHS
    Yes

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