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RWP2060080-50

RF Amplifier by RFHIC | Visit website (159 more products)

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The RWP2060080-50 from RFHIC is a GaN Power Amplifier that operates from 2 to 6 GHz. It provides an output power of 1000 W with a gain of up to 50 dB and has an average efficiency of 22%. The amplifier requires a supply voltage of 40 V, has a VSWR of 2:1, and spurious of -60 dBc.  It is designed using RFHIC’s GaN on SiC transistors. This RoHS-compliant amplifier is available in a module measuring 175 x 90 x 23 mm and is ideal for electronic warfare.

Product Specifications

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Product Details

  • Part Number
    RWP2060080-50
  • Manufacturer
    RFHIC
  • Description
    1 kW GaN Power Amplifier from 2 to 6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Electronic Warfare
  • Frequency
    2 to 6 GHz
  • Power Gain
    50 dB
  • Gain Flatness
    +/- 1.5 dB
  • Output Power
    49.03 dBm
  • Output Power
    80 W
  • Grade
    Commercial, Military, Space
  • Peak Power
    100 W
  • Input Power
    7 dBm
  • Input Power
    5 mW
  • Class
    Class AB
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input VSWR
    2.0:1
  • Sub-Category
    GaN Amplifier
  • Harmonics
    -10 dBc
  • Spurious
    -60 dBc
  • Supply Voltage
    40 VDC
  • Current Consumption
    11 A
  • Transistor Technology
    GaN on SiC
  • Dimensions
    175 x 90 x 23 mm
  • Input Connector
    SMA - Female
  • Output Connector
    N Type - Female
  • DC Connectors
    D-Sub 7-Pin Male (7W2)
  • Weight
    0.75 Kg
  • Cooling Options
    External Heat Sink
  • Operating Temperature
    -20 to 85 Degree C
  • Storage Temperature
    -40 to 105 Degree C
  • Tags
    Wideband Amplifier
  • RoHS
    Yes
  • Note
    Efficiency :- 22 Percent,

Technical Documents

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