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R&S®SAM100

RF Amplifier by Rohde & Schwarz (64 more products)

Note : Your request will be directed to Rohde & Schwarz.

The SAM100 from Rohde Schwarz is an Ultra-wideband Microwave Amplifier System that operates from 2 GHz to 20 GHz.  It delivers 20 W of output power with a high gain of 47 dB and has a noise figure of less than 8.0 dB. The amplifier can be manually or remotely operated via a digital control interface. The digital control interface makes it suitable for integration in automatic test systems. The amplifier can compensate for line losses, increases the dynamic range, and can be used as a driver for characterization and testing of power components such as transistors, filters, and frequency splitters.

The amplifier is available in a 19" rack module that measures 4.8 × 3.9 × 5.9 inches with 2.92/3.5 mm female connectors. It is targeted at manufacturers of passive and active microwave components and microwave devices for mobile radio (UMTS, LTE, 4G & 5G), IoT (WLAN, Bluetooth), satellite, and radar applications. The amplifier can also be used as a compact system amplifier in a variety of test setups and system configurations and is an excellent alternative to tube amplifiers and multifrequency band systems consisting of individual amplifiers.

Product Specifications

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Product Details

  • Part Number
    R&S®SAM100
  • Manufacturer
    Rohde & Schwarz
  • Description
    20 W Microwave Amplifier System from 2 GHz to 20 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    System
  • Industry Application
    EMC, Test & Measurement
  • Frequency
    2 to 20 GHz
  • Gain
    47 dB
  • Gain Flatness
    +/-4.5 dB
  • Noise Figure
    8 dB
  • Output Power
    43 dBm
  • Output Power
    20 W
  • P1dB
    36.1 to 40.8 dBm
  • P1dB
    5 to 12 W
  • Saturated Power
    9 to 26 W
  • Input Power
    15 dBm
  • Input Power
    0.031 W
  • Impedance
    50 Ohms
  • VSWR
    2.00:1
  • Sub-Category
    SSPA, GaN Amplifier
  • Harmonics
    -25 to -20 dBc
  • Spurious
    -80 to -70 dBc
  • AC Voltage
    100 to 240 V
  • Current Consumption
    1.5 to 3.0 A
  • Transistor Technology
    GaN
  • Technology
    HEMT
  • Package Type
    Benchtop / Rackmount
  • Dimensions
    121 × 100 × 150 mm (W × H × D)
  • Connectors
    2.92 mm, 2.92 mm - Female, 3.5 mm, 3.5 mm - Female
  • Input Connector
    2.92 mm - Female, 3.5 mm - Female
  • Output Connector
    2.92 mm - Female, 3.5 mm - Female
  • DC Connectors
    9-pin D-Sub plug
  • Weight
    3 kg (6.6 lb)
  • Operating Temperature
    0 to 40 Degree C
  • Storage Temperature
    -20 to 70 Degree C
  • Note
    Rated Power : 330 VA

Technical Documents

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