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TDLNA001013 Image

The TDLNA001013 from Teledyne e2v HiRel Electronics is a Three-Stage Low Noise Amplifier that operates from 8 to 12 GHz. It delivers a saturated output power of 15 dBm (@9.6 GHz) with a gain of 26 dB and has a noise figure of less than 2.5 dB. The LNA is based on 0.15 µm InGaAs pHEMT Technology and can handle an RF input power of +10 dBm. It uses a self-bias technique to operate on a single supply of 6 V and consumes 80 mA of current. The amplifier performs well as a low noise amplifier in receive applications and as a driver or buffer amplifier where high gain, excellent linearity, and low power consumption are required.

The TDLNA001013 is TID radiation tolerant to 100 krad (Si), making it an excellent choice for satellite communication systems by increasing the power of a radio signal with little noise and distortion that can degrade digital signals. It is available as a die and is qualified per MIL-PRF-38534 Class K-equivalent.


The Class K-equivalent element evaluation is performed per wafer.

The amplifier can also be made available in a 32-lead QFN package that measures 5.00 x 5.00 x 0.85 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Teledyne e2v HiRel Electronics
  • Description
    Space-Qualified X-Band MMIC Low-Noise Amplifier from 8 to 12 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
  • Application
    Point-to-Point, Point-to-Multipoint, Test & Measurement, VSAT
  • Industry Application
    Radar, Military, Test & Measurement, Broadcast
  • Frequency
    8 to 12 GHz
  • Gain
    21 to 32 dB
  • Noise Figure
    1.4 to 2.5 dB
  • Output Power
    10 to 15 dBm
  • Output Power
    0.01 to 0.03 W
  • P1dB
    10 to 12 dBm
  • P1dB
    0.01 to 0.015 W
  • Grade
    Commercial, Military, Space Qualified
  • IP3
    23 to 30 dBm
  • Saturated Power
    13 to 15 dBm
  • Saturated Power
    0.02 to 0.031 W
  • Impedance
    50 Ohms
  • Return Loss
    10 dB
  • Supply Voltage
    2 to 5 V
  • Current Consumption
    70 to 102 mA
  • Package Type
    Surface Mount
  • Operating Temperature
    -50 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents