CHA2595-QDG Image

CHA2595-QDG

Note : Your request will be directed to United Monolithic Semiconductors.

The CHA2595-QDG from United Monolithic Semiconductors is a wideband Low Noise Amplifier that operates from 27.5 to 43.5 GHz. It provides a gain of 19.5 dB with a noise figure of less than 2.3 dB and has a P1dB of 11 dBm. The amplifier requires a supply of 3.3 VDC and draws 61 mA of current. It is designed on a 0.10 μm GaAs pHEMT process. This LNA is available in a QFN plastic package and measures 4 x 4 mm. It is suitable for 5G, MIMO Antenna, 28/32/38/42GHz Radiolinks, SATCOM links, Radar receivers, and Test Instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    CHA2595-QDG
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    GaAs pHEMT LNA from 27.5 to 43.5 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    5G MIMO Antenna, 28/32/38/42GHz Radiolinks, Test Instrumentation
  • Industry Application
    Radar, SATCOM
  • Frequency
    27.5 to 43.5 GHz
  • Gain
    17 to 20 dB
  • Noise Figure
    2.2 to 3.1 dB
  • P1dB
    8 to 13.5 dBm
  • P1dB
    0.0063 to 0.022 W
  • IP3
    20 dBm
  • IP3
    0.1 W
  • Saturated Power
    9 to 13.5 dBm
  • Saturated Power
    0.0079 to 0.022 W
  • Return Loss
    10 dB
  • Supply Voltage
    3 to 3.5 V
  • Current Consumption
    61 mA
  • Transistor Technology
    GaAs p-HEMT
  • Package Type
    Surface Mount
  • Package
    24 L QFN
  • Dimensions
    4 x 4 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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