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CHA6161-QKB Image

The CHA6161-QKB from United Monolithic Semiconductors is a 3-Stage Power Amplifier MMIC that operates from 17 to 21.5 GHz. It delivers a saturated output power of up to 34.5 dBm (2.8 W) with a linear gain of 32 dB and a power-added efficiency of up to 43%. This three-stage power amplifier is developed on a robust GaN on SiC HEMT process and has a return loss of 8 dB (input/output). It requires a DC supply of 12-20 V and consumes less than 1300 mA of drain current. This RoHS-compliant amplifier is available in a 24-lead QFN package measuring 4 x 4 x 0.85 mm and is ideal for space and other wide range of microwave applications.

Product Specifications

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Product Details

  • Part Number
    CHA6161-QKB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    3-Stage GaN Power Amplifier MMIC from 17 to 21.5 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Industry Application
    Space View all
  • Frequency
    17 to 21.5 GHz
  • Gain
    33 to 36 dB
  • Output Power
    1.25 to 2.81 W
  • PAE
    43 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    GaN Amplifier View all
  • Input Return Loss
    12 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    12 to 20 V
  • Current Consumption
    30 to 120 mA
  • Technology
    GaN on SiC, HEMT
  • Package Type
    Surface Mount View all
  • Package
    QFN Plastic
  • RoHS
    Yes