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CHA6710-99F

RF Amplifier by United Monolithic Semiconductors (111 more products)

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The CHA6710-99F from UMS is a 5.5 watt GaN Power Amplifier that operates in the X-Band from 8 to 12.75 GHz. The amplifier provides 5.5 watts of power with 23 dB of linear gain and a power added efficiency of 36%. It requires a 25 V supply and has been designed for a wide range of applications including defense and commercial communication systems. The amplifier is supplied as a bare die. It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.

Product Specifications

    Product Details

    • Part Number :
      CHA6710-99F
    • Manufacturer :
      United Monolithic Semiconductors
    • Description :
      5.5 Watt GaN Power Amplifier Die from 8 to 12.75 GHz

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      Die
    • Industry Application :
      Aerospace & Defense, Commercial, Wireless Infrastructure
    • Frequency :
      8 to 12.75 GHz
    • Gain :
      23.5 dB
    • Grade :
      Commercial, Aerospace
    • Saturated Power :
      5 W
    • PAE :
      36 %
    • Sub-Category :
      GaN Amplifier
    • Return Loss :
      12 dB
    • Supply Voltage :
      25 V
    • Quiscent Current :
      0.2 A
    • Dimensions :
      2.7 x 2.15 x 0.1 mm
    • Operating Temperature :
      -40 to 85 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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