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CHA6710-FAB

RF Amplifier by United Monolithic Semiconductors (112 more products)

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The CHA6710-FAB from United Monolithic Semiconductors is an X-Band Two-Stage Power Amplifier that operates from 8 to 12.75 GHz. It provides 5 W of saturated output power with a gain of 22.5 dB and has a Power Added Efficiency of 35%. The amplifier can handle up to 30 dBm of peak input power.

The circuit is manufactured with a GaN pHEMT process, 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in an RoHS compliant surface mount hermetic metal ceramic package that measures 6 x 6 mm and is suitable for applications such as Defense and Space Communication Systems.

Product Specifications

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Product Details

  • Part Number
    CHA6710-FAB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    5 W X-Band GaN Power Amplifier from 8 to 12.75 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Radar, Space
  • Frequency
    8 to 12.75 GHz
  • Gain
    22.5 to 23.5 dB
  • Output Power
    36.53 to 37 dBm
  • Output Power
    4.5 to 5 W
  • PAE
    33 to 35 %
  • Pulsed/CW
    CW
  • Pulse Width
    25 uS
  • Duty Cycle
    10 %
  • Sub-Category
    GaN Amplifier
  • Return Loss
    10 dB
  • Supply Voltage
    25 to 30 V
  • Quiscent Current
    200 mA
  • Transistor Technology
    GaN pHEMT
  • Package Type
    Surface Mount
  • Package
    Leadless Hermetic Metal Ceramic Package
  • Dimensions
    6 x 6 mm
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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