CHA8054-99F Image

CHA8054-99F

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The CHA8054-99F from United Monolithic Semiconductors is a 2-Stage X-Band Power Amplifier that operates from 7.7 to 8.6 GHz. It provides up to 23 W of output power with a linear gain of 27 dB and power-added efficiency (PAE) of 50%. The circuit is fabricated using a GaN HEMT process with 0.25μm gate length, via holes through the substrate, air bridges, and electron beam gate lithography. It is available as a chip (also available as bare die) that measures 5.14 x 4.22 x 0.1 mm and is suitable for a wide range of applications, from space, military to commercial communication systems.

Product Specifications

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Product Details

  • Part Number
    CHA8054-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    23 W X-Band Power Amplifier from 7.7 to 8.6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT, Die
  • Industry Application
    Space, Military, Commercial
  • Frequency
    7.7 to 8.6 GHz
  • Gain
    27 dB
  • Output Power
    43.01 to 43.62 dBm
  • Output Power
    20 to 23 W
  • Input Power
    24 dBm
  • Input Power
    0.25 W
  • PAE
    50 %
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    12 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    28 V
  • Current Consumption
    2 A
  • Transistor Technology
    GaN HEMT
  • Package Type
    Surface Mount
  • Dimensions
    5.15 x 4.22 x 0.1 mm
  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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