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CHA8610-99F

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The CHA8610-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 8.5 to 11 GHz, Gain 23 to 24 dB, Output Power 41.46 to 41.76 dBm, Output Power 14 to 15 W, PAE 37.5 to 40 %. Tags: Chip, Power Amplifier. More details for CHA8610-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA8610-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    Power Amplifier from 8.5 to 11 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    Die View all
  • Application
    Communication View all
  • Standards Supported
    X Band View all
  • Industry Application
    Commercial, Military
  • Frequency
    8.5 to 11 GHz
  • Gain
    23 to 24 dB
  • Output Power
    41.46 to 41.76 dBm
  • Output Power
    14 to 15 W
  • Grade
    Military, Commercial
  • PAE
    37.5 to 40 %
  • Pulsed/CW
    CW/Pulsed View all
  • Pulse Width
    25 us
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Return Loss
    8 to 10 dB
  • Input Return Loss
    10 dB
  • Output Return Loss
    8 dB
  • Supply Voltage
    30 V
  • Quiscent Current
    0.45 to 0.68 A
  • Technology
    GaN pHEMT
  • Package Type
    Chip View all
  • Dimensions
    5.08 x 2.75 x 0.1 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Associated current: 1.3 to 1.5 A

Technical Documents
View details on the manufacturer's website
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