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CHZ8012-QJA

RF Amplifier by United Monolithic Semiconductors (110 more products)

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The CHZ8012-QJA from UMS is an S-Band Quasi-MMIC GaN Power Amplifier that operates from 2.6 to 3.4 GHz. The amplifier provides 12 watts of power with 16.5 dB of signal gain and a power added efficiency of 55%. It requires a 30 V supply and has been designed for a wide range of applications, from military to commercial radar systems. The amplifier is based on GaN technology and has GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.

Product Specifications

    Product Details

    • Part Number :
      CHZ8012-QJA
    • Manufacturer :
      United Monolithic Semiconductors
    • Description :
      12 W GaN High Power Amplifier from 2.6 to 3.4 GHz

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Standards Supported :
      S Band
    • Frequency :
      2600 to 3400 MHz
    • Gain :
      16.5 dB
    • Saturated Power :
      12 W
    • PAE :
      55%
    • Impedance :
      50 Ohms
    • Sub-Category :
      GaN Amplifier
    • Input Return Loss :
      11.4 dB
    • Output Return Loss :
      8.5 dB
    • Supply Voltage :
      30 V
    • Package Type :
      Surface Mount

    Technical Documents

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