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ADRF5440 Image

The ADRF5440 from Analog Devices is a Flip Chip Reflective SP4T Switch that operates from 1 to 81 GHz. This RF switch is fabricated using a silicon process and designed to support both CMOS- and LVTTL-compatible control schemes, making it suitable for a wide range of high-frequency switching applications. It has a switching time of 25 ns (ON and OFF) and an RF settling time of 35 ns. This 50-Ohm reflective switch has an insertion loss of less than 4.0 dB and provides more than 45 dB of isolation. It can handle an RF input power of up to 24 dBm (through-path and hot-switching) and has a return loss of more than 17 dB. 

The ADRF5440 supports single- and dual-supply operation, requiring a positive supply from 3.15 to 3.45 V and a negative supply from -3.15 to -3.45 V while consuming less than 510 µA of current. This RoHS-compliant switch is available as a 56-ball bumped bare die measuring 2.390 x 2.540 mm and can operate over a temperature range of -40°C to +105°C. It is ideal for 5G mmWave cellular infrastructure, military radios, electronic countermeasures (ECMs), radars, test and instrumentation, microwave radios, and VSAT applications.

Product Specifications

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Product Details

  • Part Number
    ADRF5440
  • Manufacturer
    Analog Devices
  • Description
    Flip Chip Reflective SP4T Switch from 1 to 81 GHz

General Parameters

  • Type
    Solid State Switches View all
  • Configuration
  • Termination
    Reflective View all
  • Application
    Electronic Counter Measures (ECMs), VSAT, Instrumentation, 5G
  • Application Industry
    Test & Measurement, Cellular, Military
  • Frequency
    1 to 81 GHz
  • Insertion Loss
    1.4 to 4 dB
  • Isolation
    15 to 45 dB
  • Power
    24
  • IIP3
    47 dBm
  • Supply Voltage
    -3.45 to 3.45 V
  • Supply Current
    145 to 510 uA
  • Control Voltage
    0 to 3.3 V
  • Switching Speed
    5 to 35 ns
  • Control
    LVTTL
  • Impedance
    50 Ohm View all
  • Package Type
    Surface Mount View all
  • Package
    56-Ball, Bumped Bare Die Sales
  • Dimension
    2.390mm × 2.540mm
  • Return Loss
    12 to 17 dB
  • Process
    Silicon-on-Insulator (SOI), CMOS
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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