Note : Your request will be directed to pSemi, A Murata Company.

PE42528 Image

The PE42528 from pSemi is a SPDT Reflective Switch that operates from 9 kHz to 30 GHz. It is a HaRP technology-enhanced reflective switch that is manufactured on pSemi’s UltraCMOS process, a patented variation of Silicon-on-Insulator (SOI) technology.  This SP4T switch has an insertion loss of 2 dB, a switching speed of 8 ns, and provides an isolation of 66 dB. It can handle an input power of 29 dBm (CW) and has a return loss of 22.5 dB. 

The PE42528 is equipped with electrostatic discharge (ESD) protection circuitries on both the input and output ports to ensure high safety. This UltraCMOS switch requires a control voltage of 2.7 to 3.3 V (high) and -3.3 V to -2.7 V (low) and consumes 0.39 µA of current. It is available in a land grid array (LGA) package that measures 3 x 3 mm. This switch is ideal for test and measurement, 5G mmWave, satellite communications, microwave backhaul, and radar applications.

Product Specifications

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Product Details

  • Part Number
    PE42528
  • Manufacturer
    pSemi, A Murata Company
  • Description
    UltraCMOS-Based SPDT Reflective Switch from 9 kHz to 40 GHz

General Parameters

  • Type
    Solid State Switches View all
  • Configuration
  • Termination
    Reflective View all
  • Application
    Radar, 5G, Microwave backhaul
  • Application Industry
    Test & Measurement, SATCOM, Cellular, Wireless Communication
  • Frequency
    9 kHz to 40 GHz
  • Insertion Loss
    0.86 to 2 dB
  • Isolation
    35 to 66 dB
  • P1dB
    34 dBm
  • P1dB
    2.51 W
  • Power
    25 to 29 dBm
  • Power
    0.31 to 0.79 W
  • IIP3
    46 to 49 dBm
  • IIP3 (W)
    39.81 to 79.4 W
  • Supply Voltage
    2.7 to 3.3 V
  • Supply Current
    0.39 µA
  • Control Voltage
    -3.6 to 3.6 V
  • Switching Speed
    8 to 12 ns
  • Impedance
    50 Ohm View all
  • Package Type
    Surface Mount View all
  • Package
    20L LGA
  • Dimension
    3×3 mm
  • Return Loss
    12.7 to 22 dB
  • Process
    UltraCMOS, Silicon-on-Insulator (SOI)
  • Technology
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Rise/Fall Time : 3 nSec,

Technical Documents