MACOM Technology Solutions, a leading supplier of semiconductor products, unveiled a new suite of high performance RF solutions designed to meet the demanding requirements of advanced radar systems. Many of these solutions are being demonstrated in MACOM’s Booth #943 at the International Microwave Symposium (IMS) from 17 to 19 June, 2025 in San Francisco, CA.
Some Key Products Showcase Include:
S-Band (2 – 4 GHz)
High Power GaN-on-SiC Amplifiers: A new family of 65 V, 50-ohm input and output amplifiers designed for radar applications is now available. Operating over the 2.7 – 3.8 GHz range, these amplifiers can deliver output power up to 800 W. The full portfolio of 65 V S-Band radar products includes the MAPC-A4029, MAPC-A4030, MAPC-A4031 and MAPC-A4032.
C-Band (4 – 8 GHz)
High Power GaN-on-SiC Amplifier: The MAPC-A4003-AB is a 700 W GaN-on-SiC Power Amplifier (PA). Leveraging MACOM’s GaN-on-SiC process technology, the 50-ohm PA is designed to be a compact 700 W solution for 5.2 – 5.9 GHz radar applications.
High Efficiency GaN-on-SiC MMIC Amplifier: The WSA4501S is a high efficiency GaN MMIC and ideal for large radar arrays. The 50 W GaN-on-SiC MMIC PA features 57% power added efficiency (PAE). It supports radar customers’ evolving needs for longer pulse conditions, with capabilities of up to 500 µsec and 20% duty cycle from 5.2 – 5.9 GHz.
X-Band (8 – 12 GHz)
Compact 1 kW Amplifier Pallet: The MAPC-P1060 is a 1 kW Pulsed PA Pallet offering 52 dB of gain and 30% efficiency, making it ideal for high power microwave systems and radar applications in X-Band frequencies. The pallet integrates MACOM’s power management ICs (PMICs) for bias sequencing and temperature compensation.
Highly Integrated Front End Module: The WSM5000S Front End Module (FEM) features a GaN-on-SiC power amplifier, GaN-on-SiC switch, and a GaAs low noise amplifier (LNA) with an integrated limiter. In transmit mode, it provides up to 5 W of saturated output power with 40% PAE and 32 dB of gain. The receive side can provide 16 dB of gain with a 2.5 dB of noise figure and 21 dBm OIP3. The integrated limiter provides receive side protection.
Ku-Band (12 – 18 GHz)
High Power GaN-on-SiC MMIC: The CMPA1F1H060 Ku-Band GaN-on-SiC MMIC offers high output power and efficiency. It can provide can up to 80 W of saturated output power with 25 dB of large signal gain and 35% power added efficiency (PAE) in pulsed operation. It is available in multiple formats, including bare die, surface mount QFN and flange.
RF and Microwave High Power Passives: MACOM is expanding its passives product portfolio to address applications which require power handling of more than 100 W. The first offerings of the family include the MABA-011164 1:1 RF Transmission Line Transformer and ENGPD00322A-SM Wideband Power Divider.
Stop by the MACOM Booth to learn more about these products.
