ARF1009Q5

RF Amplifier by Altum RF (27 more products)

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The ARF1009Q5 from Altum RF is a GaN Power Amplifier that operates in the X-band from 9 to 11 GHz. It delivers a saturated output power of 10 W with a power gain of 30 dB and has a power-added efficiency (PAE) of 40% for CW/Pulsed operations. The amplifier requires a DC supply of 22 V and requires a bias current of 150 mA. It is available in a robust QFN package that measures 5 × 5 mm with ESD protection to simplify handling and assembly. The amplifier is built with the latest manufacturing techniques to optimize for reliability and quality control and is ideal for demanding phased array systems, telecommunications, and test and measurement applications.

Product Specifications

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Product Details

  • Part Number
    ARF1009Q5
  • Manufacturer
    Altum RF
  • Description
    10 W CW/Pulsed GaN Power Amplifier from 9 to 11 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT, Module with Connector
  • Application
    Telecom Infrastructure
  • Industry Application
    Radar, Test & Measurement
  • Frequency
    9 to 11 GHz
  • Gain
    40 dB
  • Power Gain
    30 dB
  • Small Signal Gain
    40 dBm
  • Output Power
    36 to 40 dBm
  • Output Power
    3.98 to 10 W
  • P1dB
    36 dBm
  • P1dB
    4 W
  • IP3
    45 dBm
  • IP3
    31.6 W
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • PAE
    40 to 45 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Return Loss
    10 dB (Minimum)
  • Supply Voltage
    22 V
  • Quiscent Current
    150 mA
  • Package
    32 Lead QFN package
  • Dimensions
    5 × 5 mm
  • RoHS
    Yes