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ADPA9007-2 Image

The ADPA9007-2 from Analog Devices is a Power Amplifier (PA) that operates from 0.05 to 28 GHz. It provides a saturated output power of 2 W (~34 dBm) with a gain of 12.5 dB and a noise figure of 3.5 dB. This PA features an integrated temperature-compensated RF power detector as well as an integrated temperature sensor for improved monitoring and performance stability. It is fabricated using a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. This power amplifier requires a DC supply from 10 to 15 V and can draw up to 500 mA of current. It is available in a 24-pad bare-die IC package measuring 3 x 2.2 x 0.102 mm. It is ideal for test equipment, radar systems, electronic warfare, and general test-and-measurement applications.

Product Specifications

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Product Details

  • Part Number
    ADPA9007-2
  • Manufacturer
    Analog Devices
  • Description
    2 W Power Amplifier from 0.05 to 28 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Test Equipment View all
  • Industry Application
    Radar, Electronic Warfare, Test & Measurement
  • Frequency
    0.05 to 28 GHz
  • Gain
    10.5 to 13 dB
  • Noise Figure
    3.5 to 8 dB
  • P1dB
    26 to 33 dBm
  • P1dB
    0.39 to 1.99 W
  • IP2
    41 to 48 dBm
  • IP2
    12.589 to 63.096 W
  • IP3
    40 to 43.5 dBm
  • IP3
    10 to 22.38 W
  • Saturated Power
    30 to 35 dBm
  • Saturated Power
    1 to 3.16 W
  • Input Power
    29 dBm
  • Input Power
    0.79 W
  • Power Dissipation
    12.8 W
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Return Loss
    13 to 18 dB
  • Input Return Loss
    13 to 17 dB
  • Output Return Loss
    14 to 18 dB
  • Supply Voltage
    10 to 15 V
  • Current Consumption
    500 mA
  • Transistor Technology
    pHEMT
  • Technology
    GaAs
  • Package Type
  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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