WSGPA01 Image


Note : Your request will be directed to Wolfspeed, A Cree Company.

The WSGPA01-V1 from Wolfspeed is a GaN on SiC Discrete General-Purpose Amplifier (GPA) designed for applications up to 5 GHz. The amplifier delivers up to 10 W of output power with a small signal gain of 18 dB and a drain efficiency of better than 19%. It requires a DC Supply of 50 V for operation. The amplifier is based on a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).

This Pb-free and RoHS-compliant amplifier is available in a plastic PG-DFN package that measures 3 x 4 mm. It is designed for communication infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals and is suitable for other applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    10 W GaN on SiC General-Purpose Amplifier up to 5 GHz

General Parameters

  • Configuration
  • Application
  • Industry Application
  • Frequency
    DC to 5 GHz
  • Gain
    18 dB
  • Output Power
    26.5 dBm
  • Output Power
    446.6 mW
  • Grade
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 V
  • Current Consumption
    25 mA
  • Technology
    GaN on SiC HEMT
  • Package Type
    Surface Mount
  • Package
    DFN Plastic Package
  • Dimensions
    3 x 4 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
  • Note
    Drain Efficiency :- 19 Percent, Adjacent Channel Power Ratio :- -42 dBc,

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