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GRF5507

RF Amplifier by Guerrilla RF (58 more products)

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The GRF5507 from Guerilla RF is a Two-Stage InGaP HBT Power Amplifier that operates from 700 to 800 MHz. It provides a P1dB of 33.4 dBm with a small signal gain of 30.5 dB and a typical noise figure of 4.5 dB. The device maintains +24 dBm linear output power at 85°C with an ACLR of more than 45 dBc. It can handle up to 10 dBm of input power and operates on a supply voltage from 3 to 5.5 V while consuming 195 mA of current. The amplifier’s native linearity makes it an ideal choice for transmitter applications that typically do not employ digital pre-distortion correction schemes. It is available in a rugged QFN-16 package that measures 3 x 3 mm and is suitable for applications such as cellular boosters/repeaters, automotive compensators, picocells/femtocell, cellular DAS, customer premise equipment and wireless infrastructure.

Product Specifications

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Product Details

  • Part Number
    GRF5507
  • Manufacturer
    Guerrilla RF
  • Description
    High Linearity InGaP Power Amplifier from 700 to 800 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Boosters/Repeaters, Automotive Compensators, Picocells/Femtocells, DAS, Customer Premise Equipment
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    700 to 800 MHz
  • Gain
    28.5 to 30.5 dB
  • Noise Figure
    4.5 dB
  • P1dB
    31.9 to 33.4 dBm
  • P1dB
    1.54 to 2.18 W
  • IP3
    47.3 dBm
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Power Dissipation
    500 to 850 mW
  • Impedance
    50 Ohms
  • Input Return Loss
    11.3 dB
  • Output Return Loss
    4.8 dB
  • Supply Voltage
    5 to 5.5 V
  • Current Consumption
    195 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    QFN-16 Package
  • Dimensions
    3 x 3 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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