MAAP-FR1423-DIE

RF Amplifier by MACOM

Note : Your request will be directed to MACOM.

MAAP-FR1423-DIE Image

The MAAP-FR1423-DIE from MACOM is a GaN MMIC Power Amplifier that operates from 37 to 43 GHz. It delivers a saturated output power of 37.5 dBm (~5 W) with a gain of 21 dB and a power-added efficiency of 22%. This 50-ohm amplifier has an input and an output return loss of more than 10 dB. 

The MAAP-FR1423-DIE is fabricated using a high-performance 100 nm gate length GaN-on-Si HEMT technology. It requires a DC supply of 10 V and consumes less than 2.6 A of current. This amplifier is available as a wire-bondable bare die measuring 3.6 x 2.8 x 0.1 mm with gold bonding pads and backside metallization. It is suitable for pulsed SATCOM and radar applications.

Product Specifications

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Product Details

  • Part Number
    MAAP-FR1423-DIE
  • Manufacturer
    MACOM
  • Description
    5 W, GaN MMIC Power Amplifier from 37 to 43 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
  • Application
    Radar, Satellite Communication
  • Display Application
    RF & Microwave
  • Industry Application
    SATCOM, Radar
  • Frequency
    37 to 43 GHz
  • Gain
    16 to 21 dB
  • Power Gain
    16 to 21 dB
  • Small Signal Gain
    16 to 21 dB
  • Output Power
    35 to 37.5 dBm
  • Input Power
    22 dBm
  • PAE
    14 to 22 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Return Loss
    -10 dB
  • Tx Current
    2.3 – 2.6 A
  • Tx Gain
    16 – 21 dB
  • Current Consumption
    0.73 to 2.72 A
  • Quiscent Current
    0.73 A
  • Transistor Technology
    GaN on Si HEMT
  • Technology
    GaN
  • Package Type
  • Package
    Bare Die
  • Dimensions
    3.6 mm x 2.8 mm x 0.1 mm
  • Connectors
    Wire bond pads
  • Interface
    RF & DC Bond Pads
  • Cooling Options
    Direct heatsink mount / Copper coin PCB / AuSn die attach
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 150 Degree C
  • RoHS
    Yes

Technical Documents