MAPC-A1106

RF Amplifier by MACOM (613 more products)

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The MAPC-A1106 from MACOM is a Power Amplifier that operates from DC to 3.3 GHz. It delivers a saturated output power of 85 W (~49.3 dBm) with a small signal gain of 18.9 dB and has a saturated drain efficiency of 72.4%. This amplifier is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) D-mode HEMT and supports both CW and pulsed operation. It requires a DC supply of 50 V and consumes less than 7.6 A of drain current. The power amplifier is available in an air cavity ceramic DFN package that measures 7 x 6.5 mm and is ideal for military radio communications, RADAR, avionics, digital cellular infrastructure, RF energy, and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    MAPC-A1106
  • Manufacturer
    MACOM
  • Description
    85 W GaN Power Amplifier from DC to 3.3 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Avionics, Cellular, Radio, RF Energy
  • Industry Application
    Military, Radar, Test & Measurement, Wireless Infrastructure
  • Frequency
    DC to 3.3 GHz
  • Gain
    17 to 25.1 dB
  • Power Gain
    11.8 to 16.4 dB
  • Small Signal Gain
    18.9 dB
  • Output Power
    49 to 49.5 dBm
  • P1dB
    79 to 89 W
  • Saturated Power
    46.7 to 75.85 W
  • Saturated Power
    46.7 to 48.8 dBm
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 V
  • Transistor Technology
    GaN on Silicon Carbide HEMT
  • Technology
    GaN
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimensions
    7 x 6.5 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Drain Efficiency:67.4 to 73.6 dBm

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