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NPA1006

RF Amplifier by MACOM (582 more products)

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The NPA1006 from MACOM is a Gallium Nitride wideband power amplifier that operates from 20 MHz to 1000 MHz. This GaN on Silicon (Si) HEMT D-Mode Amplifier has been developed for narrowband to broadband applications spanning test and measurement, defense communications, land mobile radio and wireless infrastructure. It provides an output power of 24 Watts, gain of 14 dB and PAE of 62%. The amplifier requires a supply of 28 V. It is based on MACOM's Gen4 GaN Technology.

Product Specifications

  • Part Number
    NPA1006
  • Manufacturer
    MACOM
  • Description
    GaN Wideband Power Amplifier, 28 V, 12.5 W
  • Type
  • Configuration
    IC / MMIC
  • Application
    Test & Measurement, Military, Radio
  • Frequency
    20 to 1000 MHz
  • Gain
    12.5 to 14 dB
  • Small Signal Gain
    15 dB
  • Saturated Power
    19.49 W
  • Output Power
    42.9 dBm
  • Output Power
    19.49 W
  • PAE
    57.5 to 62.4 dB
  • Supply Voltage
    28 V
  • Impedance
    50 Ohms
  • Package Type
    Surface Mount
  • Operating Temperature
    -40 to 85 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C
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