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APM-6848

RF Amplifier by Marki Microwave (38 more products)

Note : Your request will be directed to Marki Microwave.

The APM-6848 from Marki Microwave is a low phase noise amplifier that operates from 2 to 29 GHz. This 2-stage amplifier provides a saturated output power of 21 dBm, a small signal gain of 23 dB with a noise figure of 6 dB. It can handle up to 20 dBm of input power and has a phase noise of -165 dBc/Hz at 10 kHz offset from the carrier frequency.

This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide enough power to drive the LO port of an S-diode mixer from 2 GHz to 20 GHz or of an H or L diode mixer from 2 GHz to 32 GHz.

This RoHS-compliant amplifier is available as a wire bondable die or in a connectorized module. It can be operated with a variety of bias conditions for both low power and high-power applications such as mobile test and measurement equipment, radar and satellite communication, 5G transceivers, and driver amplifier for S, H, and L-diode mixers.

Product Specifications

    Product Details

    • Part Number :
      APM-6848
    • Manufacturer :
      Marki Microwave
    • Description :
      2-Stage Low Phase Noise Amplifier From 2 to 29 GHz

    General Parameters

    • Type :
      Low Noise Amplifier, Driver Amplifier
    • Configuration :
      Module with Connector, Die
    • Industry Application :
      Radar, SATCOM, Test & Measurement, Cellular
    • Frequency :
      2 to 29 GHz
    • Small Signal Gain :
      16 to 23 dB
    • Noise Figure :
      6 dB
    • P1dB :
      13 to 19 dBm
    • P1dB :
      0.02 to 0.079 W
    • IP3 :
      21 dBm
    • Saturated Power :
      0.79 to 0.12 W
    • Input Power :
      5 dBm
    • Input Power :
      0.0032 W
    • Impedance :
      50 Ohms
    • Reverse Isolation :
      65 dB
    • Input Return Loss :
      9 to 11 dB
    • Output Return Loss :
      7 to 15 dB
    • Phase Noise :
      -165 dBc/Hz
    • Supply Voltage :
      3 to 6 V
    • Current Consumption :
      8 to 40 A
    • Transistor Technology :
      GaAs HBT
    • Operating Temperature :
      -40 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • RoHS :
      Yes

    Technical Documents

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