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M1603B

RF Amplifier by Microwave Systems JSC

Note : Your request will be directed to Microwave Systems JSC.

The M1603B from Microwave Systems is an X-band GaN Pulsed Amplifier Module that operates from 8.5 to 9.7 GHz. It provides 13 Watts of pulsed output power at a 10% duty cycle and has a pulse width of 100 μs. The amplifier provides a gain of 21 dB and PAE of 33%. This high power amplifier module is available in a hermetically sealed metal-based HTCC package that measures 16.5 x 8.2 x 2.4 mm. It is suitable for Communications Systems, Test Instrumentation, Weather Monitoring, and Point To Point Radio applications.

Product Specifications

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Product Details

  • Part Number
    M1603B
  • Manufacturer
    Microwave Systems JSC
  • Description
    X-band GaN Pulsed Amplifier Module from 8.5 to 9.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Communications Systems, Point to Point, Radio, Weather Monitoring
  • Industry Application
    Test & Measurement, Broadcast
  • Frequency
    8.5 to 9.7 GHz
  • Small Signal Gain
    20 to 21 dB
  • Pulse Power
    46.13 to 46.16 dBm
  • Pulse Power
    41 to 41.3 W
  • Input Power
    30 dBm
  • Input Power
    1 W
  • PAE
    30 to 33 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10%
  • VSWR
    1.50:1, 2.00:1, 1.60:1
  • Input VSWR
    1.50:1, 2.00:1
  • Output VSWR
    1.60:1, 2.00:1
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Supply Voltage
    28 V
  • Technology
    GaN
  • Package Type
    Surface Mount
  • Dimensions
    0.65 x 0.32 x 0.094 Inches
  • Weight
    1.4 Gram

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