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APN267

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The APN267 from Northrop Grumman is a GaN HEMT Power Amplifier that operates from 2 to 18 GHz. It provides a saturated output power of 38.2 dBm with a gain of over 11 dB and Power Added Efficiency of 33%. This amplifier requires a DC supply of 24 V and consumes 480 mA of current. It is fabricated using a GaN on SiC process and is available as a die that measures 12.32 sq. mm. This rugged and reliable amplifier is ideal for electronic warfare, radar and test applications.

Product Specifications

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Product Details

  • Part Number
    APN267
  • Manufacturer
    Northrop Grumman
  • Description
    38.2 dBm GaN Power Amplifier from 2 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Industry Application
    Radar, Electronic Warfare
  • Frequency
    2 to 18 GHz
  • Gain
    10 to 13 dB
  • Output Power
    35 to 40 dBm
  • Output Power
    3.1 to 10 W
  • P1dB
    35 to 36.2 dBm
  • P1dB
    3.1 to 4.16 W
  • Grade
    Military
  • Saturated Power
    3.1 to 10 W
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    2 to 12 dB
  • Output Return Loss
    4 to 26 dB
  • Supply Voltage
    20 to 28 V
  • Current Consumption
    480 mA
  • Transistor Technology
    GaN on SiC
  • Technology
    HEMT
  • Operating Temperature
    -65 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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