RF Amplifiers - Northrop Grumman

41 RF Amplifiers from Northrop Grumman meet your specification.

RF Amplifiers from Northrop Grumman are listed on everything RF. We have compiled a list of RF Amplifiers from the Northrop Grumman website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Northrop Grumman and their distributors in your region.

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  • Manufacturers: Northrop Grumman
Description:InP-Based Low Noise Amplifier MMIC from 71 to 86 GHz
Industry Application:
SATCOM, Wireless Infrastructure
Configuration:
IC/MMIC/SMT
Type:
Low Noise Amplifier
Frequency:
71 to 86 GHz
Gain:
24 to 25 dB
Noise Figure:
2.5 to 3.2 dB
Package Type:
Surface Mount
more info
Description:8 W GaN Power/Driver Amplifier from 47.2 to 51.4 GHz
Industry Application:
Cellular, IoT, SATCOM, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
47.2 to 51.4 GHz
Gain:
12 to 16 dB
Pulsed/CW:
CW
Saturated Power:
0.5623 to 7.9433 W
more info
Description:38.2 dBm GaN Power Amplifier from 2 to 18 GHz
Industry Application:
Radar, Electronic Warfare
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
2 to 18 GHz
Gain:
10 to 13 dB
Pulsed/CW:
CW/Pulsed
Saturated Power:
3.1 to 10 W
more info
Description:38.5 dBm GaN HEMT Amplifier from 16 to 20.8 GHz
Industry Application:
Military, SATCOM, Broadcast, Radar
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
16 to 20.8 GHz
Gain:
9 to 10 dB (Linear)
Saturated Power:
5.62 to 7.94 W
more info
Description:7 W GaN Power Amplifier from 47.2 to 51.4 GHz
Industry Application:
IoT, SATCOM
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
47.2 to 51.4 GHz
Gain:
16 to 20 dB
Saturated Power:
13 W
Package Type:
Chip
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
10 to 14 GHz
Gain:
12 to 13 dB
Saturated Power:
11.22 to 15.8 W
more info
Description:InP HEMT Low Noise Amplifier
Industry Application:
Radar
Configuration:
Die
Type:
Low Noise Amplifier
Frequency:
71 to 96 GHz
Gain:
26 to 29 dB
Noise Figure:
3 to 4.5 dB
more info
Description:HEMT Gain Block Amplifier
Industry Application:
Radar
Configuration:
Die
Type:
Gain Block
Frequency:
80 to 100 GHz
Gain:
14 to 17 dB
Noise Figure:
4.9 to 5 dB
more info
Description:HEMT High Power Amplifier from 92 to 96 GHz
Configuration:
Die
Type:
Power Amplifier
Frequency:
92 to 96 GHz
Gain:
6 to 7.5 dB
Saturated Power:
0.31 W
more info
Description:Three-stage Power Amplifier from 81 to 86 GHz
Industry Application:
Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Frequency:
81 to 86 GHz
Gain:
15 to 16 dB
Saturated Power:
0.17 to 0.22 W
more info
Description:HEMT Gain Block Amplifier
Industry Application:
Radar
Configuration:
Die
Type:
Gain Block
Frequency:
82 to 102 GHz
Gain:
16 to 18 dB
Noise Figure:
4.8 to 5.1dB
more info
Description:Sub-Millimeter-Wave Low-Noise Gain Block from 220 to 325 GHz
Industry Application:
Radar, Wireless Infrastructure
Configuration:
Waveguide
Type:
Gain Block
Frequency:
220 to 325 GHz
Gain:
13 dB
Noise Figure:
5 dB
Waveguide:
WR-3.4
more info
Description:HEMT Gain Block Amplifier
Industry Application:
Radar
Configuration:
Die
Type:
Gain Block
Frequency:
80 to 100 GHz
Gain:
14 to 16 dB
Noise Figure:
4.9 to 5 dB
more info
Description:82 to 102 GHz Low Noise Amplifier Die
Industry Application:
Radar
Configuration:
Die
Type:
Low Noise Amplifier
Frequency:
82 to 102 GHz
Gain:
16 to 18 dB
Noise Figure:
4.1 to 4.4 dB
more info
Description:GaN HEMT Power Amplifier
Industry Application:
SATCOM, Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
27 to 30 GHz
Gain:
19 to 22 dB
Saturated Power:
25.11 to 36.3 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
24 to 28 GHz
Gain:
18 to 20 dB
Saturated Power:
5.01 to 6.3 W
more info
Description:GaN HEMT Dual Channel Power Amplifier
Industry Application:
SATCOM, Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
13.5 to 15.5 GHz
Gain:
12 to 13 dB
Pulsed/CW:
CW/Pulsed
Saturated Power:
25.11 W
more info
Description:GaN HEMT Driver Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
10 to 14 GHz
Gain:
23 to 25.5 dB
Pulsed/CW:
CW/Pulsed
Saturated Power:
5.01 to 6.3 W
more info

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