RF Amplifiers - Northrop Grumman

38 RF Amplifiers from Northrop Grumman meet your specification.
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  • Manufacturers : Northrop Grumman
Description:7 W GaN Power Amplifier from 47.2 to 51.4 GHz
Industry Application:
IoT, SATCOM
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
47.2 to 51.4 GHz
Gain:
16 to 20 dB
Saturated Power:
13 W
Package Type:
Chip
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Radar, Aerospace & Defense, Wireless Infrastructur...
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
34.5 to 35.5 GHz
Gain:
15 to 16 dB
Pulsed/CW:
CW/Pulsed
P1dB:
38 dBm
Saturated Power:
10 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Radar, Aerospace & Defense, SATCOM, Wireless Infra...
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
43 to 46 GHz
Gain:
18 to 20 dB
P1dB:
35.5 dBm
Saturated Power:
7.07 to 7.79 W
more info
Description:140 GHz Low Noise Amplifier
Industry Application:
Radar, Wireless Infrastructure
Configuration:
Waveguide
Type:
Low Noise Amplifier
Frequency:
130 to 140 GHz
Gain:
18 dB
Noise Figure:
6 dB
Waveguide:
WR-6.5
more info
Description:300-340 Gain Block Module
Industry Application:
Radar, Wireless Infrastructure
Configuration:
Waveguide
Type:
Gain Block
Frequency:
300 to 340 GHz
Gain:
20 dB
Noise Figure:
8 dB
Waveguide:
WR-3.4
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Radar, Aerospace & Defense, Wireless Infrastructur...
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
34 to 36 GHz
Gain:
18 to 19.5 dB
Saturated Power:
5.01 to 5.6 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
SATCOM, Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
27 to 30 GHz
Gain:
19 to 22 dB
P1dB:
43 dBm
Saturated Power:
25.11 to 36.3 W
more info
Description:HEMT High Power Amplifier
Configuration:
Die
Type:
Power Amplifier
Frequency:
93 to 95 GHz
Gain:
10 dB
P1dB:
21 dBm
Saturated Power:
0.19 W
more info
Description:GaN HEMT Driver Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
10 to 14 GHz
Gain:
23 to 25.5 dB
Pulsed/CW:
CW/Pulsed
P1dB:
34 dBm
Saturated Power:
5.01 to 6.3 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
24 to 28 GHz
Gain:
18 to 20 dB
P1dB:
36 dBm
Saturated Power:
5.01 to 6.3 W
more info
Description:HEMT Power Amplifier
Industry Application:
Radar
Configuration:
Die
Type:
Power Amplifier
Frequency:
92 to 96 GHz
Gain:
20 to 23 dB
P1dB:
15 dBm
Saturated Power:
0.06 W
more info
Description:27 to 31 GHz, GaN HEMT Power Amplifier Die
Industry Application:
SATCOM, Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
27 to 31 GHz
Gain:
18 to 19.5 dB
Pulsed/CW:
CW/Pulsed
P1dB:
39 dBm
Saturated Power:
10 to 13.18 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
SATCOM, Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
27 to 31 GHz
Gain:
18 to 19.5 dB
P1dB:
17 dBm
Saturated Power:
6.3 to 7.9 W
more info
Description:HEMT Power Amplifier
Industry Application:
Radar
Configuration:
Die
Type:
Power Amplifier
Frequency:
92 to 96 GHz
Gain:
13 to15 dB
P1dB:
20 dBm
Saturated Power:
0.15 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
24 to 28 GHz
Gain:
18 to 20 dB
P1dB:
38 dBm
Saturated Power:
8.91 to 11.2 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Radar, Aerospace & Defense, SATCOM, Broadcast, Wir...
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
18 to 23 GHz
Gain:
19 to 23 dB
P1dB:
36 dBm
Saturated Power:
5.62 to 7.07 W
more info
Description:GaN HEMT Power Amplifier
Industry Application:
Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
10 to 14 GHz
Gain:
12 to 13 dB
P1dB:
39 dBm
Saturated Power:
11.22 to 15.8 W
more info
Description:GaN HEMT Dual Channel Power Amplifier
Industry Application:
SATCOM, Broadcast, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
13.5 to 15.5 GHz
Gain:
12 to 13 dB
Pulsed/CW:
CW/Pulsed
P1dB:
40.5 dBm
Saturated Power:
25.11 W
more info

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