RF Transistors

1839 RF Transistors from 17 manufacturers listed on everything RF
RF Transistors from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirement. Download Datasheets, Compare products and Request Quotations. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.
Description: 400 W GaN on SiC HEMT from 960 to 1215 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
56.02 dBm
Gain:
19 dB
Supply Voltage:
50 V
more info
Description: 125 W RF Power GaN Transistor from 30 to 2200 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
30 to 2200 MHz
Power:
51 dBm CW, 200 W Pulsed
Power(W):
125 W CW, 200 W Pulsed
Supply Voltage:
50 V
more info
Description: 1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.1 GHz
Power:
62.7 dBm
Power(W):
1862 W
Gain:
22.5 dB
Supply Voltage:
65 V
more info
Description: 500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description: 250 W LDMOS Power Transistor for 2.4 GHz RF Energy Applications
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
54 dBm
Power(W):
250 W
Gain:
13.2 to 14.4 dB
Supply Voltage:
32 V
more info
Description: Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
Description: Fully-Matched GaN on SiC RF Power Transistor from 5 to 6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.98 dBm
Power(W):
25 W
Supply Voltage:
36 V
more info
Description: 200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
2 W
Gain:
5.5 to 9 dB
Supply Voltage:
8 V
more info
Description: Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
14.6 dBm
Power(W):
0.03 W
Supply Voltage:
2.7 V
Package:
SMT 1.4x1.2
more info

The Largest Database of RF Transistors

everything RF has listed RF Transistors from the leading manufacturers. Use the parametric search tool to find RF Transistors that meet your specification. Once you find the RF transistor that you are looking for, you can download its datasheet or view its product specifications. You can then get a quotation for the product. RFQ's generated via everything RF are routed to the manufacturer and their distributors in your region, so they will get back to you with the requested information. 

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