RF Transistors

1858 RF Transistors from 17 manufacturers listed on everything RF
RF Transistors from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirement. Download Datasheets, Compare products and Request Quotations. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.
Description: 29 W RF GaN on SiC HEMT from 3.3 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
53.01 dBm
Power(W):
200 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
50 V
more info
Description: 1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.1 GHz
Power:
62.7 dBm
Power(W):
1862 W
Gain:
22.5 dB
Supply Voltage:
65 V
more info
Description: 500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description: 500 W LDMOS Transistor for RF Energy Applications
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
57 dBm
Power(W):
500 W
Gain:
15 dB
Supply Voltage:
32 V
more info
Description: Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
Description: High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Power(W):
12 W
Supply Voltage:
50 V
more info
Description: 280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.12 W
Gain:
6.5 to 11 dB
Supply Voltage:
8 V
more info
Description: 12 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
12 GHz
Power:
16 dBm
Power(W):
0.039 W
more info
Description: 35 W CW LDMOS Power Transistor from 1.8 to 512 MHz
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 500 MHz
Power:
45.44 dBm
Power(W):
35 W
Supply Voltage:
65 V
more info

The Largest Database of RF Transistors

everything RF has listed RF Transistors from the leading manufacturers. Use the parametric search tool to find RF Transistors that meet your specification. Once you find the RF transistor that you are looking for, you can download its datasheet or view its product specifications. You can then get a quotation for the product. RFQ's generated via everything RF are routed to the manufacturer and their distributors in your region, so they will get back to you with the requested information. 

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.