RF Transistors

2363 RF Transistors from 27 manufacturers listed on everything RF

RF Transistors from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirement. Download Datasheets, Compare products and Request Quotations. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:5 Watt GaN HEMT from 4 GHz to 6 GHz
Application Industry:
Radar, ISM, Test & Measurement, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
4 to 6 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
12.7 dB
Supply Voltage:
32 V
Package:
3 x 3 mm
more info
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
Description:63 W GaN Power Amplifier from 3.4 to 3.8 GHz for 5G mMIMO Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
CW/Pulse:
CW
Frequency:
520 MHz
Power:
38.13 dBm
Package Type:
Surface Mount
Power(W):
6.5 W
more info
Description:600W L-Band High Power Pulsed Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.78 to 58.45 dBm
Package Type:
Flanged
Power(W):
600 to 715 W
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
AC-360B-2/AC-360S-2
more info
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 6 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
38 dBm
Power(W):
6.31 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info

The Largest Database of RF Transistors

Key Specs when searching for RF Transistors:

Type: The type of transistor - GaN (Gallium Nitride), LDMOS, MOSFET and a number of other types.

Transistor Technology: This is the process used to create the transistor can be Si, GaN on Si, GaN on SiC etc.

Frequency: You can select the frequency range of operation that you required.

CW/Pulsed: This is the operation mode of the transistor. CW means that it is optimized for regular amplification applications and Pulsed means that it is optimized for applications like radars which require pulses of power to be generated. In case of pulsed operation, the pulse width and rise/fall times are very important.

Power (dBm or Watts): The power level at which you would like to use this transistor. The power levels might be Pulsed Power or CW power – based on your application you need to select a power level that you need.

Gain (dB): This is the level of signal amplification provided by the transistor.

Voltage: The voltage at which the transistor operates.

everything RF has listed RF Transistors from the leading manufacturers. Use the parametric search tool to find RF Transistors that meet your specification. Once you find the RF transistor that you are looking for, you can download its datasheet or view its product specifications. You can then get a quotation for the product. RFQ's generated via everything RF are routed to the manufacturer and their distributors in your region, so they will get back to you with the requested information. 

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