RF Transistors - Pulse

1201 RF Transistors from 18 Manufacturers meet your specification.
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  • CW/Pulse: Pulse
Description:GaN on SiC HEMT from 1805 to 1880 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
48.97 to 56.7 dBm
Package Type:
Flanged
Power(W):
79 to 468 W
Gain:
13.5 to 14 dB
Supply Voltage:
55 V
Package:
RF24010DKR3
more info
Description:DC to 3.6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49.78 dBm
Package Type:
Surface Mount
Power(W):
95.06 W
Gain:
25 dB
Supply Voltage:
48 V
more info
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
Description:800 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
30 to 65 V
more info
MRF6V12500HS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:RF Bipolar Transistor from DC to 12 GHz
Application Industry:
ISM, Radar, GNSS, Wireless Infrastructure, Wireles...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 12 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.0126 W
Gain:
24.5 dB
Supply Voltage:
3 V
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:1.5 kW GaN Power Transistor from 2.4 to 2.5 GHz for Medical Applications
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.4 to 2.5 GHz
Power:
61.76 dBm
Package Type:
Flanged
Power(W):
1500 W
Gain:
14 to 17 dB
Supply Voltage:
100 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info

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