GaAs Transistors

296 GaAs Transistors from 9 Manufacturers meet your specification.

GaAs Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). GaAs Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

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  • Technology: GaAs
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25 dBm
Package Type:
Chip
Power(W):
0.32 W
Gain:
7.8 to 12.5 dB
Supply Voltage:
6 to 8 V
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
22 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.16 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info
Description:20 GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info
Description:SC-70 (SOT-363) Low Noise High Freq PHEMT 5 dBm P1dB
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1.5 to 18 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.0031 W
Supply Voltage:
1.5 V
Package:
SOT-363
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
22 dBm
Package Type:
Chip
Power(W):
0.16 W
Supply Voltage:
6 to 7 V
more info
Description:28 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
28 dB
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
20.2 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
9.2 to 13.5 dB
Supply Voltage:
6 to 8 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-10 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
35.5 dBm
Package Type:
Flanged
Power(W):
3.55 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:12 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Supply Voltage:
4 V
Package:
SMT 2x2
more info

What are GaAs Transistors?

GaAs transistors or Gallium Arsenide transistors are specialized transistors used for high frequency RF and microwave applications up to 250 GHz. Transistors are an indispensable part of semiconductor devices and are primarily used to develop amplifiers and switches.

The GaAs semiconductor material is a wide band gap which makes it an ideal material for Monolithic Microwave Integrated Circuits (MMICs). Before the introduction and adoption of LDMOS and GaN, GaAs was one of the main options for high power transistors. GaAs transistors stand out for their sensitivity and have exceptional carrier mobility that supports the low noise property.

Important Parameters to consider for GaAs Transistors:

  • Operating Frequency: This is the frequency range at which a GaAs transistor is fully functional or provides the best performance.
  • Output Power (W/dBm): It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain (dB): The gain of a GaAs transistor is the ratio of output to input power or amplitude.
  • Compression point (P1dB): P1dB is one of the key parameters for a transistor. It is the point at which the input signal is amplified by an amount, which is 1 dB below the small signal gain of the device. Beyond this power the gain of the device no longer increases linearly as the input power is raised.
  • Power Added Efficiency or Drain Efficiency (%): Efficiency is a measure of how well a device converts one energy source to another. In case of a transistor drain efficiency is the ratio of output RF power to the input DC power.

everything RF lists GaAs Transistors from leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

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