GaAs Transistors

307 GaAs Transistors from 10 Manufacturers meet your specification.

GaAs Transistors from the leading manufacturers are listed here. Narrow down on GaAs Transistors based on your requirements. View product details, download datasheets and get quotes on products that meet your specification.

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  • Technology: GaAs
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power(W):
2 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:20 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
14.6 dBm
Power(W):
0.03 W
Supply Voltage:
2.7 V
Package:
SMT 1.4x1.2
more info
Description:18 GHz GaAs MESFET for Military and Commercial Applications
Application Industry:
Commercial, Military, Space
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Supply Voltage:
2 to 7 V
more info
Description:5.6 dB, GaAs pHEMT RF Transistor Up to 40 GHz
Application Industry:
Test & Measurement, Radar, Aerospace & Defence, Co...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 40 GHz
Gain:
5.6 dB
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power(W):
1 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:20 GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info
Description:Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
30 dBm
Power(W):
1 W
Supply Voltage:
4.5 V
Package:
SMT 2x2
more info
Description:GaAs pHEMT RF Transistor Up to 10 GHz
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 10 GHz
Package:
QFN
more info
Description:12GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info

What are GaAs Transistors?

GaAs transistors or Gallium Arsenide transistors are specialized transistors used for high frequency RF and microwave applications up to 250 GHz. Transistors are an indispensable part of semiconductor devices and are primarily used to develop amplifiers and switches.

The GaAs semiconductor material is a wide band gap which makes it an ideal material for Monolithic Microwave Integrated Circuits (MMICs). Before the introduction and adoption of LDMOS and GaN, GaAs was one of the main options for high power transistors. GaAs transistors stand out for their sensitivity and have exceptional carrier mobility that supports the low noise property.

Important Parameters to consider for GaAs Transistors:

  • Operating Frequency: This is the frequency range at which a GaAs transistor is fully functional or provides the best performance.
  • Output Power (W/dBm): It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain (dB): The gain of a GaAs transistor is the ratio of output to input power or amplitude.
  • Compression point (P1dB): P1dB is one of the key parameters for a transistor. It is the point at which the input signal is amplified by an amount, which is 1 dB below the small signal gain of the device. Beyond this power the gain of the device no longer increases linearly as the input power is raised.
  • Power Added Efficiency or Drain Efficiency (%): Efficiency is a measure of how well a device converts one energy source to another. In case of a transistor drain efficiency is the ratio of output RF power to the input DC power.

everything RF lists GaAs Transistors from leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

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