GaN on SiC Transistors

919 GaN on SiC Transistors from 21 Manufacturers meet your specification.

GaN on SiC Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). GaN on SiC Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

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  • Technology: GaN on SiC
Description:450 W GaN-on-SiC HEMT from 758 to 960 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
758 to 960 MHz
Power:
59.54 dBm
Package Type:
Earless Flanged
Power(W):
900 W (P4)
Gain:
18 dB
Supply Voltage:
48 V
more info
Description:13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.5 to 5 GHz
Gain:
16 dB
Supply Voltage:
48 V
Package:
DFN Package
more info
Description:5 W GaN Power Transistor from DC to 6 GHz
Application Industry:
Radar, Military, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
5 W (Psat)
Supply Voltage:
28 V
Package:
SOIC Plastic Package
more info
Description:2 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
33.5 dBm
Package Type:
Chip
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 to 2.9 GHz
Power:
56 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info

What are GaN on SiC Transistors?

Gallium Nitride on Silicon Carbide (GaN on SiC) transistors are specialized transistors used in high-efficiency power applications. They are High-Electron-Mobility Transistors (HEMT) type that use GaN on a SiC Wafer which makes it a very reliable material for transistor construction. These transistors are ideal for high power and high-speed switching applications. High power applications make them ideal for use in base stations, radio transmitters, radars, satellites and various other wireless infrastructure and military applications.

GaN is a wide band-gap (WBG) semiconductor material and is used to construct semiconductor devices such as diodes and transistors. It boasts high levels of thermal conductivity, heat capacity and hardness with low sensitivity to ionizing radiation. However, developing native GaN substrates have some technological challenges and GaN generally utilizes a wafer substrate to overcome the technological challenges.

The choice of that wafer substrate material is critical. This material must have a high thermal conductivity and high lattice match with GaN. Silicon Carbide, or SiC, has high thermal conductivity, and also matches the GaN lattice.

Important parameters of GaN on SiC Transistors:

  • Operating Frequency: This is the frequency range at which a GaN on SiC Transistor is fully functional or provides the best performance.
  • Output Power (W/dBm): It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain (dB): The gain of a Transistor is the ratio of output to input power/amplitude. This is measured in dB.
  • Power/Drain Efficiency (%): Efficiency is a measure of how well a device converts one energy source to another. In case of a transistor, drain efficiency is the ratio of output RF power to the input DC power.
  • Package Type: Based on the required application, the package type for GaN on SiC Transistors can be selected. There are a number of different package types available - Connectorized, Surface Mount, Die etc.

everything RF lists GaN Transistors from the leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

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