GaN Transistors

770 GaN Transistors from 19 Manufacturers meet your specification.

GaN Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). GaN Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

Selected Filters Reset All
  • Technology: GaN
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.496 to 2.69 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20.2 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
WG21200SP Image
Description:200 W, GaN on SiC Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:25 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Military, Wireless Infrastructure
Transistor Type:
DHEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25.11 W
Gain:
17.5 dB
Supply Voltage:
32 to 34 V
Package:
8 Pin QFN
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:15 W GaN RF Transistor from 0.03 to 1.215 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.215 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
12 to 32 V
Package:
5 x 6 mm
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:2700 to 2900 MHz, 11 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
11 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

What are GaN Transistors?

GaN (Gallium Nitride) Transistors are transistors that are ideal for High Power RF applications. These are usually High-Electron-Mobility Transistors (HEMT) that exhibit significant advantages over silicon and GaAs transistors and provide this high-performance in very competitive size and weight. GaN is a wide band-gap (WBG) semiconductor material and is used to construct semiconductor devices such as diodes and transistors.

Though there are several competing technologies that can match some of the capabilities of Gallium Nitride (GaN), GaN has several advantages over legacy RF technologies:

  • High Breakdown Voltage
  • Enhanced Carrier Density and Saturation Velocity
  • High operating Junction Temperatures

Further, since most GaN is Grown on semi-insulating substrates, parasitic losses are diminished, compared with other technologies.

GaN transistors are widely integrated into many communications devices like radio transmitters, radars, satellites, and electronic-warfare equipment of all types.

Important Parameters of a GaN Transistor:

  • Technology: There are two types of GaN Transistors
    • GaN on SiC - In this case the substrate is Silicon Carbide
    • GaN on Si - In this case the substrate is Silicon
  • Operating Frequency: This is the frequency range at which a GaN transistor is fully functional or provides the best performance.
  • CW/Pulsed: This is the operation mode of the transistor. CW means that it is optimized for regular amplification applications and Pulsed means that it is optimized for applications like radars which require pulses of power to be generated. In the case of pulsed operation, the pulse width and rise/fall times are of high importance.
  • Output Power: It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain: The gain of a transistor is the ratio of output to input power or amplitude. This is measured in dB.
  • Power, or Drain Efficiency (%): It is the overall efficiency of the GaN transistor that includes the input power, gain and their subsequent effect.

everything RF lists GaN Transistors from the leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

GaN transistors can also be used for Power Electronics. The properties of these transistors are very different from RF GaN Transistors. Click here to learn about GaN Transistors for Power Electronics.

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type