RF GaN Transistors

929 GaN Transistors from 20 Manufacturers meet your specification.

RF GaN Transistors from the leading manufacturers are listed here. Narrow down on RF GaN Transistors based on your requirements. View product details, download datasheets and get quotes on products that meet your specification.

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  • Technology : GaN
Description:500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
57.1 dBm
Power(W):
512.86 W
Supply Voltage:
50 V
more info
Description:15 dB, GaN on SiC Transistor from 3.4 to 3.6 GHz
Application Industry:
Base Station
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.4 to 3.6 GHz
Power(W):
50 W
Gain:
15 dB
Supply Voltage:
48 V
Package:
DFN
more info
Description:15 W GaN on Si Transistor from DC to 2.7 GHz
Application Industry:
Radar, Cellular, RF Energy, Avionics, Test & Measu...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.7 GHz
Power:
41.8 to 44.3 dBm
Power(W):
15.13 to 26.91 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:4 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
36.5 dBm
Power(W):
4 W
Supply Voltage:
28 V
more info
Description:GaN Power Transistors from 1030 to 1090 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power(W):
1100 W
Supply Voltage:
50 V
more info
Description:Doherty GaN Power Transistor from 100 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure, Base Station
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 to 2690 MHz
Power:
37.48 39.03 dBm
Power(W):
5.6 to 8 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:30 W GaN High Electron Mobility Transistor from DC to 8 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Package:
SMT
more info
Description:15 W GaN HEMT Transistor Operates up to 10 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 10 GHz
Supply Voltage:
28 V
more info
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
50 V
more info

What are GaN Transistors?

GaN (Gallium Nitride) Transistors are transistors that are ideal for High Power RF applications. These are usually High-Electron-Mobility Transistors (HEMT) that exhibit significant advantages over silicon and GaAs transistors and provide this high-performance in very competitive size and weight. GaN is a wide band-gap (WBG) semiconductor material and is used to construct semiconductor devices such as diodes and transistors.

Though there are several competing technologies that can match some of the capabilities of Gallium Nitride (GaN), GaN has several advantages over legacy RF technologies:

  • High Breakdown Voltage
  • Enhanced Carrier Density and Saturation Velocity
  • High operating Junction Temperatures

Further, since most GaN is Grown on semi-insulating substrates, parasitic losses are diminished, compared with other technologies.

GaN transistors are widely integrated into many communications devices like radio transmitters, radars, satellites, and electronic-warfare equipment of all types.

Important Parameters of a GaN Transistor:

  • Technology: There are two types of GaN Transistors
    • GaN on SiC - In this case the substrate is Silicon Carbide
    • GaN on Si - In this case the substrate is Silicon
  • Operating Frequency: This is the frequency range at which a GaN transistor is fully functional or provides the best performance.
  • CW/Pulsed: This is the operation mode of the transistor. CW means that it is optimized for regular amplification applications and Pulsed means that it is optimized for applications like radars which require pulses of power to be generated. In the case of pulsed operation, the pulse width and rise/fall times are of high importance.
  • Output Power: It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain: The gain of a transistor is the ratio of output to input power or amplitude. This is measured in dB.
  • Power, or Drain Efficiency (%): It is the overall efficiency of the GaN transistor that includes the input power, gain and their subsequent effect.

everything RF lists GaN Transistors from the leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

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