RF Transistors - Page 4

2351 RF Transistors from 26 Manufacturers meet your specification.
Description:320 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
13.9 dB
Supply Voltage:
48 V
more info
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:1.03 to 1.09 GHz, LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
15.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:30 W GaN High Electron Mobility Transistor from DC to 8 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Package:
SMT
more info
Description:GaN on SiC, GaN HEMT from 2.2 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.2 GHz
Power:
46.5 to 47.5 dBm
Package Type:
Flanged
Power(W):
44.66 to 56.2 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
PD57045-E Image
Description:45 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
46.53 dBm
Package Type:
Surface Mount
Power(W):
45 W
Supply Voltage:
28 V
more info
WG60014SD Image
Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 12 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
41 dBm
Power(W):
12.59 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-10 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
35.5 dBm
Package Type:
Flanged
Power(W):
3.55 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info

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