RF Transistors - Page 4

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:56.2 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
40 dBm
Package Type:
Surface Mount, Flanged
Power(W):
10 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:28 W GaN-on-SiC Transistor from 4.5 to 4.95 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
4500 to 4950 MHz
Power:
36.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
5 W
Gain:
14 dB
Supply Voltage:
48 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
46.53 to 49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:30 W GaN High Electron Mobility Transistor from DC to 8 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Package:
SMT
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
25.12 W
Supply Voltage:
50 V
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
RF2L42008CG2 Image
Description:8 W, LDMOS RF Transistor from 700 to 4200 MHz
Application Industry:
Avionics, Radar, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
700 to 4200 MHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
28 V
more info
WGB03006025F Image
Description:25 W, GaN on SiC Power Transistor from 3 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3 to 6 GHz
Power:
43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 50 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47 dBm
Power(W):
50.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
25 dBm
Package Type:
Flanged
Power(W):
0.32 W
Supply Voltage:
14 to 16 V
Package:
Ceramic
more info
LY2843V Image
Description:2 kW Push-Pull LDMOS Transistor from 88 to 108 MHz
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
88 to 108 MHz
Gain:
18 dB
Supply Voltage:
50 V
more info

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