RF Transistors - Sumitomo Electric Device Innovations

270 RF Transistors from Sumitomo Electric Device Innovations meet your specification.
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  • Manufacturers : Sumitomo Electric Device Innovations
Description:130 W GaN HEMT from DC to 3 GHz
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3 GHz
Power:
51.1 to 51.9 dBm
Power(W):
129 to 155 dBm
Gain:
13.1 to 13.9 dB
Supply Voltage:
50 V
more info
Description:20 W GaN-HEMT from 7.1 to 8.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
7.1 to 8.5 GHz
Power:
41.5 to 43 dBm (P5dB)
Power(W):
14.13 to 19.95 W (P5dB)
Gain:
10 to 12 dB
Supply Voltage:
24 V
more info
Description:8 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
23.5 to 24.5 dBm
Power(W):
0.22 to 0.28 W
more info
Description:12 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
12 GHz
Power:
16 dBm
Power(W):
0.039 W
more info
Description:9.2 to 10 GHz, 10 to 11.5 dB Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
9.2 to 10 GHz
Power:
551 dBm
Power(W):
100 to 125.89 W
Gain:
10 to 11.5 dB
Supply Voltage:
24 V
more info
Description:8.5 to 9.8 GHz, Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
47 to 48 dBm
Power(W):
50.12 to 63.1 W
Supply Voltage:
50 V
more info
Description:9.2 to 10.5 GHz, 7.5 to 9.5 dB Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
9.2 to 10.5 GHz
Power:
51.5 to 53.5 dBm
Power(W):
141.25 to 223.87 W
Gain:
7.5 to 9.5 dB
Supply Voltage:
50 V
more info
Description:2 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Supply Voltage:
3 to 6 V
more info
Description:900 MHz, 19 to 21 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
900 MHz
Power:
48.5 to 49.5 dBm
Power(W):
70.79 to 89.1 W
Gain:
19 to 21 dB
Supply Voltage:
50 V
more info
Description:2.7 GHz, 15 to 16 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 GHz
Power:
45.5 to 46.5 dBm
Power(W):
35.48 to 44.66 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
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