RF Transistors - Sumitomo Electric Device Innovations

269 RF Transistors from Sumitomo Electric Device Innovations meet your specification.
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  • Manufacturers : Sumitomo Electric Device Innovations  
Description: 12 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
12 GHz
Power:
16 dBm
Power(W):
0.039 W
more info
Description: 8 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
23.5 to 24.5 dBm
Power(W):
0.22 to 0.28 W
more info
Description: 2.7 GHz, 15 to 16 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 GHz
Power:
45.5 to 46.5 dBm
Power(W):
35.48 to 44.66 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description: 9.2 to 10 GHz, 10 to 11.5 dB Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
9.2 to 10 GHz
Power:
551 dBm
Power(W):
100 to 125.89 W
Gain:
10 to 11.5 dB
Supply Voltage:
24 V
more info
Description: 8.5 to 10.1 GHz, Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.5 to 10.1 GHz
Power:
43.3 to 45.3 dBm
Power(W):
21.38 to 33.88 W
Supply Voltage:
50 V
more info
Description: 8 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
20.5 to 21.5 dBm
Power(W):
0.11 to 0.14 W
more info
Description: 9.2 to 10 GHz, 10.5 to 11.5 dB Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
9.2 to 10 GHz
Power:
47 to 48 dBm
Power(W):
50.12 to 63.1 W
Gain:
10.5 to 11.5 dB
Supply Voltage:
24 V
more info
Description: 900 MHz, 18 to 20 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
900 MHz
Power:
551 dBm
Power(W):
100 to 125.89 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description: 2.2 GHz, 15 to 16 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.2 GHz
Power:
46.5 to 47.5 dBm
Power(W):
44.66 to 56.2 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description: 11.4 to 12 GHz, Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
11.4 to 12 GHz
Power:
49.5 to 51 dBm
Power(W):
89.13 to 125.89 W
Supply Voltage:
50 V
more info

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