RF Transistors - Sumitomo Electric Device Innovations

274 RF Transistors from Sumitomo Electric Device Innovations meet your specification.

RF Transistors from Sumitomo Electric Device Innovations are listed on everything RF. We have compiled a list of RF Transistors from the Sumitomo Electric Device Innovations website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Sumitomo Electric Device Innovations and their distributors in your region.

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  • Manufacturers: Sumitomo Electric Device Innovations
Description:GaAs FET from 6 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6 GHz
Power:
27.5 to 28.8 dBm
Package Type:
Flanged
Power(W):
0.56 to 0.76 W
Package:
WF
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
28.5 to 30 dBm
Package Type:
Flanged
Power(W):
0.71 to 1 W
Package:
WG
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
30.5 to 31.5 dBm
Package Type:
Chip
Power(W):
1.12 to 1.41 W
more info
Description:GaAs FET from 6 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6 GHz
Power:
30.5 to 31.8 dBm
Package Type:
Flanged
Power(W):
1.12 to 1.51 W
Package:
WF
more info
Description:GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Supply Voltage:
50 V
more info
Description:GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
53 to 54 dBm
Package Type:
Flanged
Power(W):
251.19 W
Supply Voltage:
50 V
more info
Description:GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Supply Voltage:
50 V
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
6.31 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Flanged
Power(W):
0.2 to 0.25 W
Package:
WG
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Chip
Power(W):
0.2 to 0.25 W
more info

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