RF Transistors - Sumitomo Electric Device Innovations

274 RF Transistors from Sumitomo Electric Device Innovations meet your specification.
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  • Manufacturers: Sumitomo Electric Device Innovations
Description:43 W, X-Band Radar GaN Semiconductor from 9.2 to 9.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9.2 to 9.5 GHz
Power:
46.4 dBm
Power(W):
43.7 W
Gain:
21.4 dB
more info
Description:24 W, X-Band Radar GaN Semiconductor from 8.5 to 10.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
8.5 to 10.1 GHz
Power:
43.3 to 43.8 dBm
Power(W):
21.4 to 24 W
Gain:
23.3 dB
more info
Description:270 W, X-Band Radar GaN Semiconductor from 8.5 to 9.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
8.5 to 9.5 GHz
Power:
53.71 to 54.31 dBm
Power(W):
235 to 270 W
Gain:
7.7 to 8.3 dB
more info
Description:250 W, X-Band Radar GaN Semiconductor from 9.8 to 10.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9.8 to 10.5 GHz
Power:
53.42 to 53.98 dBm
Power(W):
220 to 250 W
Gain:
7.4 to 8 dB
more info
Description:270 W, X-Band Radar GaN Semiconductor from 9 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9 to 10 GHz
Power:
53.71 to 54.31 dBm
Power(W):
235 to 270 W
Gain:
7.7 to 8.3 dB
more info
Description:130 W GaN HEMT from DC to 3 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3 GHz
Power:
51.1 to 51.9 dBm
Power(W):
129 to 155 dBm W
Gain:
13.1 to 13.9 dB
Supply Voltage:
50 V
more info
Description:20 W GaN-HEMT from 7.1 to 8.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.1 to 8.5 GHz
Power:
41.5 to 43 dBm (P5dB)
Power(W):
14.13 to 19.95 W (P5dB)
Gain:
10 to 12 dB
Supply Voltage:
24 V
more info
Description:12 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
12 GHz
Power:
16 dBm
Power(W):
0.039 W
more info
Description:8 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
23.5 to 24.5 dBm
Power(W):
0.22 to 0.28 W
more info
Description:2 GHz, Gain GaAs FET
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Supply Voltage:
3 to 6 V
more info

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