RF Transistors - Page 3

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:28 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
28 dB
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
C4H27P400A Image
Description:400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
50 V
more info
Description:HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1 to 26.5 GHz
Power:
29 dBm
Package Type:
Chip
Power(W):
0.79 W
Gain:
8 to 13.5 dB
Supply Voltage:
8 V
more info
A2I25D012GN Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
33.42 dBm
Package Type:
Flanged
Power(W):
2.2 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info
Description:5.8 to 6.7 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.8 to 6.7 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
40 V
more info
Description:RF HBT for 5GHz Applications
Application Industry:
GNSS, SATCOM, Wireless Infrastructure, Wireless Co...
Transistor Type:
Bipolar
Technology:
Si
Frequency:
Up to 85 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.003 W
Gain:
23 dB
Supply Voltage:
1.8 V
more info
Description:420 to 470 MHz, 300 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
21 dB
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type