RF Transistors - BeRex, Inc.

28 RF Transistors from BeRex, Inc. meet your specification.
Selected Filters Reset All
  • Manufacturers : BeRex, Inc.
Description:4 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
36.5 dBm
Power(W):
4 W
Supply Voltage:
28 V
more info
Description:2 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
33.5 dBm
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:8 W GaN Power HEMT Die from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
39 dBm
Power(W):
8 W
Supply Voltage:
28 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.71 W
Gain:
7 to 11 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.41 W
Gain:
6 to 10 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.12 W
Gain:
6.5 to 11 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
2 W
Gain:
5.5 to 9 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.28 W
Gain:
9 to 13.5 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency (MHz)

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.