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RF Transistors - NXP Semiconductors

255 RF Transistors from NXP Semiconductors meet your specification.

RF Transistors from NXP Semiconductors are listed on everything RF. We have compiled a list of RF Transistors from the NXP Semiconductors website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to NXP Semiconductors and their distributors in your region.

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MRFE6VP100H Image
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NXP Semiconductors - MRFE6VP100H

RF Transistor from NXP Semiconductors
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Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780--4
more info
A2I25D012GN Image
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NXP Semiconductors - A2I25D012GN

RF Transistor from NXP Semiconductors
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Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
33.42 dBm
Package Type:
Flanged
Power(W):
2.2 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info
MRF1513N Image
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NXP Semiconductors - MRF1513N

RF Transistor from NXP Semiconductors
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Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
12.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
A2G35S200-01S Image
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NXP Semiconductors - A2G35S200-01S

RF Transistor from NXP Semiconductors
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Description:Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
MRFE6S9125N Image
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NXP Semiconductors - MRFE6S9125N

RF Transistor from NXP Semiconductors
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Description:Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
44.31 dBm
Package Type:
Flanged
Power(W):
26.98 W
Supply Voltage:
28 V
Package:
CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC
more info
MW6S004N Image
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NXP Semiconductors - MW6S004N

RF Transistor from NXP Semiconductors
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Description:Lateral N-Channel RF Power MOSFET, 36526 MHz, 4 W, 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
36.02 dBm
Package Type:
Surface Mount
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 466-03, STYLE 1 PLD 1.5 PLASTIC
more info
AFV141KHS Image
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NXP Semiconductors - AFV141KHS

RF Transistor from NXP Semiconductors
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Description:BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHz, 1000 W PEAK, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
MRF6V10010N Image
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NXP Semiconductors - MRF6V10010N

RF Transistor from NXP Semiconductors
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Description:Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.4 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
50 V
Package:
CASE 466--03, STYLE 1 PLD--1.5 PLASTIC
more info
MRF6V12250H Image
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NXP Semiconductors - MRF6V12250H

RF Transistor from NXP Semiconductors
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Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
MRF1535N Image
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NXP Semiconductors - MRF1535N

RF Transistor from NXP Semiconductors
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Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
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