RF Transistors - NXP Semiconductors

254 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
MMRF5018HS Image
Description:125 W GaN Power Transistor from 1 to 2700 MHz
Application Industry:
Cellular, Military, Radar
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
450 to 2700 MHz
Power:
50 to 50.97 dBm
Package Type:
Flanged
Power(W):
100 to 125 W
Supply Voltage:
50 V
more info
A5G23H110N Image
Description:13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
Application Industry:
Cellular, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
41.4 dBm
Package Type:
Surface Mount
Power(W):
13.8 W
Supply Voltage:
48 V
Package:
DFN
more info
A2V07H400-04N Image
Description:107 W LDMOS Power Transistor from 420 to 851 MHz
Application Industry:
Base Station, Cellular
Transistor Type:
LDMOS
Frequency:
420 to 692 MHz
Power:
57.3 dBm (3dB)
Power(W):
537 W (3dB)
Supply Voltage:
0 to 55 V
more info
A3G26D055N Image
Description:Doherty GaN Power Transistor from 100 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure, Base Station
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 to 2690 MHz
Power:
37.48 39.03 dBm
Package Type:
Surface Mount
Power(W):
5.6 to 8 W
Supply Voltage:
48 V
Package:
DFN
more info
MHTG1200HS Image
Description:300 W RF Power GaN Transistor for Cooking Applications
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Package Type:
Surface Mount
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
more info
MRF24G300HS Image
Description:300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.87 to 55.26 dBm
Package Type:
Flanged
Power(W):
307 to 336 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
Package:
4 Terminals Ceramic
more info
A2G22S190-01S Image
Description:36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.56 dBm
Package Type:
Flanged
Power(W):
36 W
Supply Voltage:
0 to 55 Vdc
Package:
NI-400S-2S
more info
A3G26H501W17S Image
Description:56 W Doherty RF Power GaN Transistor from 2496 to 2960 MHz
Application Industry:
Cellular
Technology:
GaN on SiC, Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.496 to 2.69 GHz
Power:
57 dBm (P3dB)
Package Type:
Flanged
Power(W):
500 W ( P3dB)
Gain:
12.7 to 15.7 dB
Supply Voltage:
48 V
more info
A2V09H525-04N Image
Description:120 W RF Power LDMOS Transistor from 720 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
720 to 960 MHz
Power:
50.79 dBm
Power(W):
120 w
Gain:
18.9 dB
Supply Voltage:
48 V
more info
MRFX035H Image
Description:35 W CW LDMOS Power Transistor from 1.8 to 512 MHz
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 500 MHz
Power:
45.44 dBm
Power(W):
35 W
Supply Voltage:
65 V
more info

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