RF Transistors - NXP Semiconductors

250 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers : NXP Semiconductors
Description:300 W RF Power GaN Transistor for Cooking Applications
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
more info
Description:300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.87 to 55.26 dBm
Power(W):
307 to 336 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
Package:
4 Terminals Ceramic
more info
Description:36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular
Transistor Type:
FET
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.56 dBm
Power(W):
36 W
Supply Voltage:
0 to 55 Vdc
Package:
NI-400S-2S
more info
Description:56 W Doherty RF Power GaN Transistor from 2496 to 2960 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.496 to 2.69 GHz
Power:
57 dBm (P3dB)
Power(W):
500 W ( P3dB)
Gain:
12.7 to 15.7 dB
Supply Voltage:
48 V
more info
Description:120 W RF Power LDMOS Transistor from 720 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
720 to 960 MHz
Power:
50.79 dBm
Power(W):
120 w
Gain:
18.9 dB
Supply Voltage:
48 V
more info
Description:35 W CW LDMOS Power Transistor from 1.8 to 512 MHz
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 500 MHz
Power:
45.44 dBm
Power(W):
35 W
Supply Voltage:
65 V
more info
Description:65 V LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
57.78 dBm
Power(W):
600 W
Supply Voltage:
65 V
more info
Description:125 W RF Power GaN Transistor from 30 to 2200 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
30 to 2200 MHz
Power:
51 dBm CW, 200 W Pulsed
Power(W):
125 W CW, 200 W Pulsed
Supply Voltage:
50 V
more info
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS, MOSFET
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
Description:N--Channel Enhancement--Mode Lateral MOSFETs
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS, MOSFET
CW/Pulse:
Pulse, CW
Frequency:
2110 to 2170 MHz
Power:
47.99 dBm
Power(W):
63 W
Gain:
16.4 to 16.5 dB
Supply Voltage:
48 V
more info

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