RF Transistors - Page 5

2358 RF Transistors from 26 Manufacturers meet your specification.
Description:468 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.6 dB
Supply Voltage:
48 V
more info
Description:4 W GaN on SiC RF Power Transistor from 2 to 12 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2 to 12 GHz
Package Type:
Die
Supply Voltage:
30 V
more info
Description:20 GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info
Description:Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
30 dBm
Package Type:
Chip
Power(W):
1 W
Supply Voltage:
4.5 V
Package:
SMT 2x2
more info
Description:6 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Wireless Infrastructure, Broadcast
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 to 32 V
Package:
16 Pin QFN
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
22 dBm
Package Type:
Chip
Power(W):
0.16 W
Supply Voltage:
6 to 7 V
more info
Description:5.6 dB, GaAs pHEMT RF Transistor Up to 40 GHz
Application Industry:
Test & Measurement, Radar, Commercial, Military, W...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 40 GHz
Package Type:
Die
Gain:
5.6 dB
more info
Description:150 W Linear/Pulsed GaN HEMT from DC to 3.2 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Surface Mount
Gain:
13.5 to 18.7 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
Package Type:
Ceramic
Power(W):
313 W(CW, at 3dB Compression), 468 W(Pulsed
Gain:
17.5 dB(CW), 17.8 dB(Pulsed)
Supply Voltage:
45 V(CW), 50 V(Pulsed)
more info
Description:500 W GaN HEMT from 0.5 to 1.8 GHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.8 GHz
Power:
56.25 to 57.24 dBm
Package Type:
Flanged
Power(W):
529.66 W
Supply Voltage:
50 V
more info
Description:2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Gain:
28.5 to 29.8 dB
Supply Voltage:
75 V
more info

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