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QPD1006

RF Transistor by Qorvo (96 more products)

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The QPD1006 from Qorvo is a GaN-on-SiC HEMT Transistor that operates from 1.2 to 1.4 GHz. It provides a CW output power of 313 Watts with a gain of 17.5 dB and a pulsed power of 468 Watts with a gain of 17.8 dB and has a drain efficiency of over 55%.

The device is internally matched to 50 ohms and is available in an industry-standard air cavity package. This RoHS-compliant GaN IMFET transistor is ideally suited for military and civilian radar applications and can support pulsed and CW operations.

Product Specifications

    Product Details

    • Part Number :
      QPD1006
    • Manufacturer :
      Qorvo
    • Description :
      GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence, Radar
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      1.2 to 1.4 GHz
    • Power :
      54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
    • Power(W) :
      313 W(CW, at 3dB Compression), 468 W(Pulsed
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      10%
    • Gain :
      17.5 dB(CW), 17.8 dB(Pulsed)
    • Supply Voltage :
      45 V(CW), 50 V(Pulsed)
    • Current :
      750 mA
    • Package Type :
      Ceramic
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 85 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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