RF Transistors - HEMT

804 RF Transistors from 19 Manufacturers meet your specification.
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  • Transistor Type: HEMT
Description:800 W GaN Power Transistor from 1930 to 1995 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1930 to 1995 MHz
Package Type:
Flanged
Supply Voltage:
52 V
more info
Description:DC to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2.7 GHz
Power:
51.76 dBm
Package Type:
Surface Mount
Power(W):
149.97 W
Gain:
21.8 dB
Supply Voltage:
65 to 70 V
Package:
7.2 x 6.6 mm
more info
Description:1.5 kW GaN Power Transistor from 2.4 to 2.5 GHz for Medical Applications
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.4 to 2.5 GHz
Power:
61.76 dBm
Package Type:
Flanged
Power(W):
1500 W
Gain:
14 to 17 dB
Supply Voltage:
100 V
more info
Description:15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement, Wireless In...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Package:
SMT
more info
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
WG18200SP Image
Description:200 W, GaN on SiC Power Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info

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