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IGN0912M2400

RF Transistor by Integra Technologies, Inc.
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The IGN0912M2400 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.22 GHz, Power 63.8 to 64.62 dBm, Power(W) 2400 to 2900 W, Gain 19 to 22 dB, Input Return Loss 8 to 24 dB. Tags: Flanged. More details for IGN0912M2400 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN0912M2400
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.4 kW GaN on SiC HEMT from 960 MHz to 1.22 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Type
    TACAN and DME Systems
  • CW/Pulse
    Pulse View all
  • Frequency
    960 MHz to 1.22 GHz
  • Power
    63.8 to 64.62 dBm
  • Power(W)
    2400 to 2900 W
  • Pulsed Width
    24 x (3.5us on, 11us off)
  • Gain
    19 to 22 dB
  • Input Return Loss
    8 to 24 dB
  • Supply Voltage
    75 V
  • Drain Efficiency
    62 to 75 %
  • Drain Current
    100 mA
  • Package Type
    Flanged View all
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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