RF Transistors - Radar

672 RF Transistors from 19 Manufacturers meet your specification.
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  • Application Industry: Radar
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
Description:800 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
30 to 65 V
more info
MRF6V12500HS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:RF Bipolar Transistor from DC to 12 GHz
Application Industry:
ISM, Radar, GNSS, Wireless Infrastructure, Wireles...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 12 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.0126 W
Gain:
24.5 dB
Supply Voltage:
3 V
more info
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:SC-70 (SOT-363) Low Noise High Freq PHEMT 5 dBm P1dB
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1.5 to 18 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.0031 W
Supply Voltage:
1.5 V
Package:
SOT-363
more info
Description:28 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
28 dB
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info

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