RF Transistors - Flanged

1433 RF Transistors from 18 Manufacturers meet your specification.
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  • Package Type: Flanged
Description:800 W GaN Power Transistor from 1930 to 1995 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1930 to 1995 MHz
Package Type:
Flanged
Supply Voltage:
52 V
more info
MRFE6VP100H Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780--4
more info
Description:1.03 to 1.09 GHz, 300 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
18.5 dB
Supply Voltage:
50 V
more info
Description:1.5 kW GaN Power Transistor from 2.4 to 2.5 GHz for Medical Applications
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.4 to 2.5 GHz
Power:
61.76 dBm
Package Type:
Flanged
Power(W):
1500 W
Gain:
14 to 17 dB
Supply Voltage:
100 V
more info
Description:225 W, LDMOS RF Transistor from DC to 1.5 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.5 GHz
Power:
53.52 dBm
Package Type:
Flanged
Power(W):
225 W
Supply Voltage:
50 V
more info
WG18200SP Image
Description:200 W, GaN on SiC Power Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info
C4H27P400A Image
Description:400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
50 V
more info
A2I25D012GN Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
33.42 dBm
Package Type:
Flanged
Power(W):
2.2 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info

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