RF Transistors - Flanged

1429 RF Transistors from 18 Manufacturers meet your specification.
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  • Package Type: Flanged
Description:15.8 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:800 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
30 to 65 V
more info
MRF6V12500HS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:1.5 kW GaN Power Transistor from 2.4 to 2.5 GHz for Medical Applications
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.4 to 2.5 GHz
Power:
61.76 dBm
Package Type:
Flanged
Power(W):
1500 W
Gain:
14 to 17 dB
Supply Voltage:
100 V
more info
Description:63 W, LDMOS RF Transistor from DC to 945 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 945 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
63 W
Supply Voltage:
28 V
more info
Description:2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Supply Voltage:
75 V
more info
A2T18H410-24S Image
Description:Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Flanged
Power(W):
70.96 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Package Type:
Flanged
Gain:
14 dB
Supply Voltage:
12.5 V
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS, Broadcast, Wireless Communication
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Package Type:
Flanged
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info

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