1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN1214M700

IGN1214M700

RF Transistor by Integra Technologies, Inc.
239 more products from this company
Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN1214M700 Image

The IGN1214M700 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.20 to 1.40 GHz, Power 58.45 dBm, Power(W) 700 W, Duty_Cycle 10%, Gain 15 to 19 dB. Tags: Flanged, Ceramic. More details for IGN1214M700 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN1214M700
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    L-Band, GaN/SiC HEMT RF Power Transistor from 1.20 to 1.40 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Radar View all
  • Application
    L Band View all
  • CW/Pulse
    Pulse View all
  • Frequency
    1.20 to 1.40 GHz
  • Power
    58.45 dBm
  • Power(W)
    700 W
  • Peak Output Power
    700 W
  • Pulsed Width
    300 uS
  • Duty_Cycle
    10%
  • Gain
    15 to 19 dB
  • Efficiency
    65%
  • Input Return Loss
    8 to 18 dB
  • VSWR
    2.00:1, 5.00:1
  • Supply Voltage
    50 V
  • Input Power
    40 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    55 to 80 %
  • Drain Current
    54 A
  • Thermal Resistance
    0.2 Degree C/W
  • Package Type
    Flanged, Ceramic
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Operating Temperature
    -55 to 225 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    DC Gate Current: 5.4 mA, Pulse droop: -0.4 to 0.2 dB, Gate Pinch-Off Voltage: -5V

Technical Documents
View details on the manufacturer's website
View similar products