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IGN1214L500B

RF Transistor by Integra Technologies, Inc. (205 more products)

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The IGN1214L500B from Integra Technologies is a GaN L-Band Radar Transistor that operates from 1.2 to 1.4 GHz. This GaN on SiC HEMT transistor provides an output power of over 500 watts with a pulse width of 2 ms and a duty cycle of 20%. The transistor provides a power gain of 15 dB with an efficiency of 65% while operating from a 50 V supply. It is available in a metal-based package with a sealed ceramic epoxy lid.

Product Specifications

    Product Details

    • Part Number :
      IGN1214L500B
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      L-Band Radar GaN on SiC Transistor from 1.2 to 1.4 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      1.2 to 1.4 GHz
    • Peak Output Power :
      500 W
    • Pulsed Width :
      2 ms
    • Duty_Cycle :
      20 %
    • Power Gain (Gp) :
      14.5 to 16.5 dB
    • Effeciency :
      65 %
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.8 V
    • Input Power :
      12.2 to 17.5 W
    • Drain Leakage Current (Id) :
      4 mA
    • Quiescent Drain Current :
      200 mA
    • Package Type :
      Flanged
    • Dimension :
      29.87 x 13.72 mm
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -55 to 200 Degree C

    Technical Documents

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