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The LQ801 from Polyfet RF Devices is a RF Transistor with Power 44 dBm, Power(W) 30 W, Power Gain (Gp) 12 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flanged. More details for LQ801 can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
10 W Surface-Mount GaN HEMT from DC to 8 GHz
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