Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Polyfet RF Devices.
The LB2301 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 125 W, Power Gain (Gp) 18 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flanged. More details for LB2301 can be seen below.
Gan Wideband Doherty Power Transistor from 3.3 to 3.7 GHz
300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz
347 W GaN Power Transistor from 2.3 to 2.5 GHz
100 W GaN-on-SiC Transistor from 2400 to 2500 MHz
275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
Copyright © everything RF All Rights Reserved  |
Create an account on everything RF to get a range of benefits.
Login to everything RF to download datasheets, white papers and more content.