Note : Your request will be directed to Polyfet RF Devices.
The LB2301 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 125 W, Power Gain (Gp) 18 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LB2301 can be seen below.
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
1250 W GaN Power Transistor from 430 to 450 MHz
8 W GaN Power HEMT Die from DC to 26 GHz
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