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The LB2301 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 125 W, Power Gain (Gp) 18 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LB2301 can be seen below.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
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