LB2301 Image

LB2301

RF Transistor by Polyfet RF Devices

Note : Your request will be directed to Polyfet RF Devices.

The LB2301 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 125 W, Power Gain (Gp) 18 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LB2301 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LB2301
  • Manufacturer
    Polyfet RF Devices
  • Description
    125 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast
  • Power
    50 dBm
  • Power(W)
    125 W
  • Power Gain (Gp)
    18 dB
  • Transconductance
    5 MOhms
  • VSWR
    20.0:1
  • Drain Gate Voltage
    80 V
  • Breakdown Voltage - Drain-Source
    70 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    10 V
  • Drain Efficiency
    0.5
  • Drain Current
    15 A
  • Drain Bias Current
    1 mA
  • Quiescent Drain Current
    0.4 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    360 W
  • Feedback Capacitance
    1.4 pF
  • Input Capacitance
    70 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    25 pF
  • Thermal Resistance
    0.48 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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