Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Polyfet RF Devices.
The LB2301 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 125 W, Power Gain (Gp) 18 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LB2301 can be seen below.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
You can now find similar products from multiple companies on everything RF.
Click to see all the sectors that we cover
Copyright 2020 © everything RF All Rights Reseverd  |
Our team will get back to you shortly.
Create an account on everything RF to get a range of benefits.
Login to everything RF to download datasheets, white papers and more content.
Fill the form to Download the Media Kit
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.