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The LK2201 from Polyfet RF Devices is a RF Transistor with Power 46 dBm, Power(W) 50 W, Power Gain (Gp) 17 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LK2201 can be seen below.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
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