Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Polyfet RF Devices.
The LK2201 from Polyfet RF Devices is a RF Transistor with Power 46 dBm, Power(W) 50 W, Power Gain (Gp) 17 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LK2201 can be seen below.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
You can now find similar products from multiple companies on everything RF.
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
Fill the form to Download the Media Kit
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.
