The MMRF1004N from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Power Gain (Gp) 15.5 dB@ 2170 MHz, Power 1 W, P1dB 10 W, Supply Voltage 28 V. More details for MMRF1004N can be seen below.

Product Specifications

  • Part Number
    MMRF1004N
  • Manufacturer
    NXP Semiconductors
  • Description
    1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    GSM, CDMA, W-CDMA
  • Application Industry
    Defense, Commercial, Military
  • Application Type
    Military
  • Class
    Class AB
  • Frequency
    2110 to 2170 MHz
  • Power Gain (Gp)
    15.5 dB@ 2170 MHz
  • Power
    1 W
  • P1dB
    10 W
  • Supply Voltage
    28 V
  • Effeciency
    0.15
  • Matching
    Input
  • Thermal Resistance
    2.3°C/W
  • Package
    Die
  • RoHS
    Yes
  • Note
    Connectors: High Pwr RF SMT 3
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