The MMRF1004N from NXP Semiconductors is a RF Transistor with Frequency 1.6 to 2.2 GHz, Power 40 dBm, Power(W) 10 W, P1dB 40.9 dBm, Power Gain (Gp) 14 to 17 dB. Tags: Flange. More details for MMRF1004N can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MMRF1004N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      GSM, EDGE, N-CDMA, WCDMA, Electronic, Warfare
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      1.6 to 2.2 GHz
    • Power :
      40 dBm
    • Power(W) :
      10 W
    • CW Power :
      10 W
    • P1dB :
      40.9 dBm
    • Pulsed Width :
      8 us
    • Power Gain (Gp) :
      14 to 17 dB
    • Input Return Loss :
      -15 to -9 dB
    • VSWR :
      5.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      1.5 to 3.5 Vdc
    • Voltage - Gate-Source (Vgs) :
      -0.5 to 12 Vdc
    • Drain Efficiency :
      0.15
    • Drain Current :
      130 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      2.3 °C/W
    • Package Type :
      Flange
    • Package :
      TO--270--2 PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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