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MMRF1004GN

The MMRF1004GN from NXP Semiconductors is a RF Transistor with Frequency 1.6 to 2.2 GHz, Power 40 dBm, Power(W) 10 W, P1dB 40.9 dBm, Power Gain (Gp) 14 to 17 dB. Tags: Flange. More details for MMRF1004GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1004GN
  • Manufacturer
    NXP Semiconductors
  • Description
    GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    GSM, EDGE, N-CDMA, WCDMA, Electronic, Warfare
  • CW/Pulse
    Pulse
  • Frequency
    1.6 to 2.2 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • CW Power
    10 W
  • P1dB
    40.9 dBm
  • Pulsed Width
    8 us
  • Power Gain (Gp)
    14 to 17 dB
  • Input Return Loss
    -15 to -9 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3.5 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 12 Vdc
  • Drain Efficiency
    0.15
  • Drain Current
    130 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.3 °C/W
  • Package Type
    Flange
  • Package
    TO--270G--2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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