The AFT05MS031N from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 520 MHz, Power 44.91 dBm, Power(W) 30.97 W, P1dB 44.9 dBm, Power Gain (Gp) 16.5 to 19 dB. More details for AFT05MS031N can be seen below.

Product Specifications

  • Part Number
    AFT05MS031N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    1.8 to 520 MHz
  • Power
    44.91 dBm
  • Power(W)
    30.97 W
  • CW Power
    31 W
  • P1dB
    44.9 dBm
  • Power Gain (Gp)
    16.5 to 19 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    13.6 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.71
  • Drain Current
    10 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.67 °C/W
  • Package Type
    Flange
  • Package
    TO--270--2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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