1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Polyfet RF Devices
  6. LX2301

LX2301

RF Transistor by Polyfet RF Devices
164 more products from this company
Download Datasheet
Request Quote

Note : Your request will be directed to Polyfet RF Devices.

The LX2301 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 1.1 GHz, Power 47.78 dBm, Power(W) 60 W, Gain 16 dB (Power), Power Gain (Gp) 16 dB. Tags: Flanged. More details for LX2301 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    LX2301
  • Manufacturer
    Polyfet RF Devices
  • Description
    LDMOS Single Ended Transistor from 1 to 1100 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Technology
    Si View all
  • Application Industry
    Braodcast, Communication
  • Frequency
    1 MHz to 1.1 GHz
  • Power
    47.78 dBm
  • Power(W)
    60 W
  • Gain
    16 dB (Power)
  • Power Gain (Gp)
    16 dB
  • Transconductance
    5 MOhms
  • VSWR
    1.20:1
  • Supply Voltage
    28 V
  • Drain Gate Voltage
    80 V
  • Breakdown Voltage - Drain-Source
    70 V
  • Voltage - Drain-Source (Vdss)
    80 V
  • Voltage - Gate-Source (Vgs)
    -9 to 11 V
  • Drain Efficiency
    0.55
  • Drain Current
    11 A
  • Drain Bias Current
    1 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    230 W
  • Feedback Capacitance
    1.4 pF
  • Input Capacitance
    70 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    25 pF
  • Thermal Resistance
    0.75 Degree C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
View similar products